Part Details for NE3210S01-T1B by NEC Electronics Group
Overview of NE3210S01-T1B by NEC Electronics Group
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for NE3210S01-T1B
NE3210S01-T1B CAD Models
NE3210S01-T1B Part Data Attributes
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NE3210S01-T1B
NEC Electronics Group
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Datasheet
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NE3210S01-T1B
NEC Electronics Group
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NEC ELECTRONICS CORP | |
Package Description | DISK BUTTON, O-XRDB-G4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 3 V | |
Drain Current-Max (ID) | 0.015 A | |
FET Technology | HETERO-JUNCTION | |
Highest Frequency Band | KU BAND | |
JESD-30 Code | O-XRDB-G4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Package Body Material | UNSPECIFIED | |
Package Shape | ROUND | |
Package Style | DISK BUTTON | |
Peak Reflow Temperature (Cel) | 230 | |
Polarity/Channel Type | N-CHANNEL | |
Power Gain-Min (Gp) | 12 dB | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | RADIAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for NE3210S01-T1B
This table gives cross-reference parts and alternative options found for NE3210S01-T1B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE3210S01-T1B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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NE3210S01-T1 | NE3210S01-T1 | Renesas Electronics Corporation | NE3210S01-T1B vs NE3210S01-T1 |
NE3210S01 | NE3210S01 | Renesas Electronics Corporation | NE3210S01-T1B vs NE3210S01 |
NE3210S01-T1B | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, PLASTIC, SO1, 4 PIN | California Eastern Laboratories (CEL) | NE3210S01-T1B vs NE3210S01-T1B |
NE3210S01-T1 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, S01, 4 PIN | NEC Electronics America Inc | NE3210S01-T1B vs NE3210S01-T1 |
NE3210S01 | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET | NEC Electronics Group | NE3210S01-T1B vs NE3210S01 |
NE3210S01-T1 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, PLASTIC, SO1, 4 PIN | California Eastern Laboratories (CEL) | NE3210S01-T1B vs NE3210S01-T1 |
NE3210S01-T1B | NE3210S01-T1B | Renesas Electronics Corporation | NE3210S01-T1B vs NE3210S01-T1B |