Datasheets
NE02107B by:

RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, L Band, Silicon, NPN

Part Details for NE02107B by California Eastern Laboratories (CEL)

Overview of NE02107B by California Eastern Laboratories (CEL)

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for NE02107B

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NE02107B Part Data Attributes:

NE02107B California Eastern Laboratories (CEL)
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NE02107B California Eastern Laboratories (CEL) RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, L Band, Silicon, NPN
Part Life Cycle Code Obsolete
Ihs Manufacturer CALIFORNIA EASTERN LABORATORIES
Package Description DISK BUTTON, O-CRDB-F4
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.07 A
Collector-Base Capacitance-Max 1 pF
Collector-Emitter Voltage-Max 12 V
Configuration SINGLE
DC Current Gain-Min (hFE) 20
Highest Frequency Band L BAND
JESD-30 Code O-CRDB-F4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style DISK BUTTON
Polarity/Channel Type NPN
Power Gain-Min (Gp) 12 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position RADIAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 4500 MHz

Alternate Parts for NE02107B

This table gives cross-reference parts and alternative options found for NE02107B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE02107B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2SC3122 TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP RF Small Signal Toshiba America Electronic Components NE02107B vs 2SC3122
BFP181R RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4 Infineon Technologies AG NE02107B vs BFP181R
ZTX325M1TA RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92 STYLE, E-LINE PACKAGE-3 Diodes Incorporated NE02107B vs ZTX325M1TA
2SC5011FB RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SUPER MINIMOLD PACKAGE-4 NEC Electronics Group NE02107B vs 2SC5011FB
MRF947BT1 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CASE 419-02, 3 PIN Freescale Semiconductor NE02107B vs MRF947BT1
BF775 RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236 Siemens NE02107B vs BF775
BFP181R RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN Siemens NE02107B vs BFP181R
2SC3867 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MPAK-3 Renesas Electronics Corporation NE02107B vs 2SC3867
2C4957 RF Small Signal Bipolar Transistor, 1-Element, Silicon, NPN Semicoa Semiconductors NE02107B vs 2C4957
2SC4325 TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP RF Small Signal Toshiba America Electronic Components NE02107B vs 2SC4325

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