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N-Channel Logic Level Enahncement Mode Field Effect Transistor 60V, 4A, 100mΩ, 4000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
26M1853
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Newark | Mosfet Transistor, N Channel, 4 A, 60 V, 0.07 Ohm, 10 V, 1.6 V Rohs Compliant: Yes |Onsemi NDT3055L Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2301 |
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$0.4620 / $1.0500 | Buy Now |
DISTI #
23K8163
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Newark | Mosfet, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V, Power Dissipation:3W Rohs Compliant: Yes |Onsemi NDT3055L Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3680 / $0.3780 | Buy Now |
DISTI #
26AC2664
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Newark | 60V N-Fet 100 Mo Sot223 Rohs Compliant: Yes |Onsemi NDT3055L Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4170 | Buy Now |
DISTI #
72K9001
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Newark | Mosfet, N Channel, 60V, 4A, Sot-223, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V Rohs Compliant: Yes |Onsemi NDT3055L Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.4620 / $1.0500 | Buy Now |
DISTI #
04X6649
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Newark | Mosfet, N, 60V, Sot-223, Reel, Transistor Polarity:N Channel, Continuous Drain Current Id:4A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.07Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.6V, Power Dissipation Rohs Compliant: Yes |Onsemi NDT3055L Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.3940 / $0.4150 | Buy Now |
DISTI #
NDT3055LCT-ND
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DigiKey | MOSFET N-CH 60V 4A SOT-223-4 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
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$0.3800 / $1.0100 | Buy Now |
DISTI #
NDT3055L
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Avnet Americas | Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: NDT3055L) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.3472 / $0.4144 | Buy Now |
DISTI #
NDT3055L
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Avnet Americas | Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: NDT3055L) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.3472 / $0.4144 | Buy Now |
DISTI #
NDT3055L
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Avnet Americas | Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: NDT3055L) RoHS: Compliant Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
512-NDT3055L
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Mouser Electronics | MOSFET SOT-223 N-CH LOGIC RoHS: Compliant | 16979 |
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$0.3980 / $1.0000 | Buy Now |
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NDT3055L
onsemi
Buy Now
Datasheet
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NDT3055L
onsemi
N-Channel Logic Level Enahncement Mode Field Effect Transistor 60V, 4A, 100mΩ, 4000-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Manufacturer Package Code | 318H-01 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 73 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 3 W | |
Pulsed Drain Current-Max (IDM) | 25 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for NDT3055L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDT3055L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NDT3055L/S62Z | 3.7A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261 | Texas Instruments | NDT3055L vs NDT3055L/S62Z |
NDT3055D84Z | Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | NDT3055L vs NDT3055D84Z |
NDT3055L99Z | Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | NDT3055L vs NDT3055L99Z |
NDT3055LS62Z | Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | NDT3055L vs NDT3055LS62Z |
NDT3055L_NL | Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | NDT3055L vs NDT3055L_NL |
NDT3055LTNR | Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Fairchild Semiconductor Corporation | NDT3055L vs NDT3055LTNR |
NDT3055L/D84Z | 3.7A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261 | Texas Instruments | NDT3055L vs NDT3055L/D84Z |
NDT3055S62Z | Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | NDT3055L vs NDT3055S62Z |
NDT3055LL84Z | Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | NDT3055L vs NDT3055LL84Z |
NDT3055LD84Z | Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Fairchild Semiconductor Corporation | NDT3055L vs NDT3055LD84Z |