Transistors
NDS9947
Description: Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

Overview of NDS9947 by Fairchild Semiconductor Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Automotive

Price & Stock for NDS9947 by Fairchild Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
Quest Components 3.5 A, 20 V, 0.1 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 2000
  • 1 $2.6520
  • 490 $1.0940
  • 915 $0.9945
$0.9945 / $2.6520 Buy Now
Quest Components 3.5 A, 20 V, 0.1 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 1760
  • 1 $2.6520
  • 490 $1.0940
  • 915 $0.9945
$0.9945 / $2.6520 Buy Now
Quest Components 3.5 A, 20 V, 0.1 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 616
  • 1 $2.6520
  • 227 $1.2266
  • 490 $1.0940
$1.0940 / $2.6520 Buy Now
Rochester Electronics Power Field-Effect Transistor, 3.5A, 20V, 0.1ohm, 2-Element, P-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 23768
  • 1 $0.7053
  • 25 $0.6912
  • 100 $0.6630
  • 500 $0.6348
  • 1,000 $0.5995
$0.5995 / $0.7053 Buy Now
Sense Electronic Company Limited SO-8 2500
RFQ

CAD Models for NDS9947 by Fairchild Semiconductor Corporation
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Part Data Attributes for NDS9947 by Fairchild Semiconductor Corporation

NDS9947
Fairchild Semiconductor Corporation
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
SOIC
Package Description
SO-8
Pin Count
8
Manufacturer Package Code
8LD, JEDEC MS-012, .150"NARROW BODY
Reach Compliance Code
unknown
ECCN Code
EAR99
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
Drain Current-Max (ID)
3.5 A
Drain-source On Resistance-Max
0.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
2 W
Pulsed Drain Current-Max (IDM)
15 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. NDS9947
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
    VS

Alternate Parts for NDS9947

This table gives cross-reference parts and alternative options found for NDS9947. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDS9947, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
NDS9947 3.5A, 20V, 0.1ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 Rochester Electronics LLC NDS9947 vs NDS9947
Part Number Description Manufacturer Compare
RF1K4922396 2.5A, 30V, 0.36ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA Intersil Corporation NDS9947 vs RF1K4922396
RF1K4922396 Power Field-Effect Transistor, 2.5A I(D), 30V, 0.36ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Fairchild Semiconductor Corporation NDS9947 vs RF1K4922396
FDFS6N303 Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation NDS9947 vs FDFS6N303
HAT1055RJ 5A, 60V, 0.13ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, FP-8DA, SOP-8 Renesas Electronics Corporation NDS9947 vs HAT1055RJ
RRH075P03TB Power Field-Effect Transistor, 7.5A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 ROHM Semiconductor NDS9947 vs RRH075P03TB
HUF76113DK8T Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Harris Semiconductor NDS9947 vs HUF76113DK8T
PHN210T/T3 Power Field-Effect Transistor Nexperia NDS9947 vs PHN210T/T3
HAT1038R 3.5A, 60V, 0.23ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8 Renesas Electronics Corporation NDS9947 vs HAT1038R
BSO305N Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Infineon Technologies AG NDS9947 vs BSO305N
FDS9953AF011 Power Field-Effect Transistor, 2.9A I(D), 30V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation NDS9947 vs FDS9953AF011

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