NDS0610/S62Z
Description: 120mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB

Overview of NDS0610/S62Z by Texas Instruments

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

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Part Data Attributes for NDS0610/S62Z by Texas Instruments

NDS0610/S62Z
Texas Instruments
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
Package Description
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknown
ECCN Code
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
0.12 A
Drain-source On Resistance-Max
10 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
5 pF
JEDEC-95 Code
TO-236AB
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. NDS0610/S62Z
    Texas Instruments
    120mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
    VS

Alternate Parts for NDS0610/S62Z

This table gives cross-reference parts and alternative options found for NDS0610/S62Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDS0610/S62Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
TP0610TT1 Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN Vishay Siliconix NDS0610/S62Z vs TP0610TT1
TP0610T Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN Vishay Siliconix NDS0610/S62Z vs TP0610T
VP0610T Transistor, Sipex Corporation NDS0610/S62Z vs VP0610T
VP0610T Transistor, Exar Corporation NDS0610/S62Z vs VP0610T
TP0610T Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, Temic Semiconductors NDS0610/S62Z vs TP0610T
TP0610TT2 Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, Temic Semiconductors NDS0610/S62Z vs TP0610TT2
NDS0610/D87Z 120mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB Texas Instruments NDS0610/S62Z vs NDS0610/D87Z
TP0610TT1 Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, Temic Semiconductors NDS0610/S62Z vs TP0610TT1
Part Number Description Manufacturer Compare
TP0610T Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, Temic Semiconductors NDS0610/S62Z vs TP0610T
TP0610TT1 Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, Temic Semiconductors NDS0610/S62Z vs TP0610TT1
TP0610TT1 Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN Vishay Siliconix NDS0610/S62Z vs TP0610TT1
TP0610TT2 Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, Temic Semiconductors NDS0610/S62Z vs TP0610TT2
VP0610T Transistor, Exar Corporation NDS0610/S62Z vs VP0610T
VP0610T Transistor, Sipex Corporation NDS0610/S62Z vs VP0610T
TP0610T Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN Vishay Siliconix NDS0610/S62Z vs TP0610T
NDS0610/D87Z 120mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB Texas Instruments NDS0610/S62Z vs NDS0610/D87Z

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