Part Details for NDB5060LS62Z by Fairchild Semiconductor Corporation
Overview of NDB5060LS62Z by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for NDB5060LS62Z
NDB5060LS62Z CAD Models
NDB5060LS62Z Part Data Attributes
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NDB5060LS62Z
Fairchild Semiconductor Corporation
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Datasheet
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NDB5060LS62Z
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 26A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 26 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 78 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NDB5060LS62Z
This table gives cross-reference parts and alternative options found for NDB5060LS62Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDB5060LS62Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NDB5060L99Z | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 26A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | NDB5060LS62Z vs NDB5060L99Z |
| NDB5060LL86Z | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 26A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | NDB5060LS62Z vs NDB5060LL86Z |
| IRLU4343-701TRLPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 26A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 | NDB5060LS62Z vs IRLU4343-701TRLPBF |
| IRLU4343-701TRRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 26A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 | NDB5060LS62Z vs IRLU4343-701TRRPBF |
| DMNH6042SPS-13 | Diodes Incorporated | $0.4627 | Power Field-Effect Transistor, 24A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | NDB5060LS62Z vs DMNH6042SPS-13 |
| IRLU4343-701TRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 26A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 | NDB5060LS62Z vs IRLU4343-701TRPBF |
| NDB5060S62Z | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 26A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | NDB5060LS62Z vs NDB5060S62Z |