Datasheets
MWI50-12A7T by:

Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-19

Part Details for MWI50-12A7T by IXYS Corporation

Overview of MWI50-12A7T by IXYS Corporation

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Price & Stock for MWI50-12A7T

Part # Distributor Description Stock Price Buy
DISTI # MWI50-12A7T
TTI IGBT Modules 50 Amps 1200V Min Qty: 6 Package Multiple: 6 Container: Box Americas - 0
Buy Now
DISTI # MWI50-12A7T
TME Module: IGBT, transistor/transistor, IGBT three-phase bridge Min Qty: 1 0
  • 1 $175.1200
  • 3 $155.5400
  • 6 $139.2300
$139.2300 / $175.1200 RFQ

Part Details for MWI50-12A7T

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MWI50-12A7T Part Data Attributes

MWI50-12A7T IXYS Corporation
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MWI50-12A7T IXYS Corporation Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-19
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Package Description SIXPACK-19
Pin Count 19
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 85 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X13
JESD-609 Code e3
Number of Elements 6
Number of Terminals 13
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 350 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 570 ns
Turn-on Time-Nom (ton) 170 ns
VCEsat-Max 2.7 V

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