Part Details for MWE6IC9100NBR1 by Freescale Semiconductor
Overview of MWE6IC9100NBR1 by Freescale Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for MWE6IC9100NBR1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Narrow Band High Power Amplifier, 869MHz Min, 960MHz Max, 1 Func, MOS RoHS: Compliant Status: Obsolete Min Qty: 1 | 2453 |
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$60.6000 / $71.2900 | Buy Now |
Part Details for MWE6IC9100NBR1
MWE6IC9100NBR1 CAD Models
MWE6IC9100NBR1 Part Data Attributes
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MWE6IC9100NBR1
Freescale Semiconductor
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Datasheet
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Compare Parts:
MWE6IC9100NBR1
Freescale Semiconductor
869MHz - 960MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE 1621-02, TO-270, WB-14, 14 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FREESCALE SEMICONDUCTOR INC | |
| Package Description | ROHS COMPLIANT, PLASTIC, CASE 1621-02, TO-270, WB-14, 14 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.33.00.01 | |
| Characteristic Impedance | 50 Ω | |
| Construction | COMPONENT | |
| Gain | 31 dB | |
| JESD-609 Code | e3 | |
| Number of Functions | 1 | |
| Operating Frequency-Max | 960 MHz | |
| Operating Frequency-Min | 869 MHz | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Equivalence Code | FLNG,.8''H SPACE | |
| Power Supplies | 26 V | |
| RF/Microwave Device Type | NARROW BAND HIGH POWER | |
| Technology | MOS | |
| Terminal Finish | Matte Tin (Sn) | |
| VSWR-Max | 10 |
Alternate Parts for MWE6IC9100NBR1
This table gives cross-reference parts and alternative options found for MWE6IC9100NBR1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MWE6IC9100NBR1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MW5IC970NBR1 | RF LDMOS Wideband 2-Stage Power Amplifier, 800-900 MHz, 70 W, 28 V | Freescale Semiconductor | MWE6IC9100NBR1 vs MW5IC970NBR1 |
| MD8IC970GNR1 | 850MHz - 940MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER | NXP Semiconductors | MWE6IC9100NBR1 vs MD8IC970GNR1 |
| MWE6IC9080NBR1 | 865MHz - 960MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER | NXP Semiconductors | MWE6IC9100NBR1 vs MWE6IC9080NBR1 |
| MW5IC970GNBR1 | 132MHz - 960MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, MO-253BA, CASE1329A-04, WB-16 | Freescale Semiconductor | MWE6IC9100NBR1 vs MW5IC970GNBR1 |
| MWE6IC9080NBR1 | GSM, GSM EDGE RF LDMOS Wideband Integrated Power Amplifier, 865-960 MHz, 80 W CW, 28 V | Freescale Semiconductor | MWE6IC9100NBR1 vs MWE6IC9080NBR1 |
| MDE6IC7120GNR1 | Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-768 MHz, 25 W Avg., 28 V | Freescale Semiconductor | MWE6IC9100NBR1 vs MDE6IC7120GNR1 |