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MUN5114DW1T1 by:

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

Part Details for MUN5114DW1T1 by Motorola Semiconductor Products

Overview of MUN5114DW1T1 by Motorola Semiconductor Products

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Part Details for MUN5114DW1T1

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MUN5114DW1T1 Part Data Attributes

MUN5114DW1T1 Motorola Semiconductor Products
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MUN5114DW1T1 Motorola Semiconductor Products Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer MOTOROLA INC
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.21.00.95
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 4.7
Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80
JESD-30 Code R-PDSO-G6
JESD-609 Code e0
Number of Elements 2
Number of Terminals 6
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type PNP
Power Dissipation Ambient-Max 0.15 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

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