Part Details for MUN5112DW1T2 by Motorola Mobility LLC
Overview of MUN5112DW1T2 by Motorola Mobility LLC
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for MUN5112DW1T2
MUN5112DW1T2 CAD Models
MUN5112DW1T2 Part Data Attributes:
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MUN5112DW1T2
Motorola Mobility LLC
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Datasheet
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MUN5112DW1T2
Motorola Mobility LLC
100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MOTOROLA INC | |
Package Description | SMALL OUTLINE, R-PDSO-G6 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 60 | |
JESD-30 Code | R-PDSO-G6 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | PNP | |
Power Dissipation Ambient-Max | 0.15 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |