Part Details for MUBW50-12E8 by IXYS Corporation
Overview of MUBW50-12E8 by IXYS Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MUBW50-12E8
MUBW50-12E8 CAD Models
MUBW50-12E8 Part Data Attributes
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MUBW50-12E8
IXYS Corporation
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Datasheet
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MUBW50-12E8
IXYS Corporation
Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | MODULE | |
| Package Description | FLANGE MOUNT, R-XUFM-X35 | |
| Pin Count | 35 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 90 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | COMPLEX | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X35 | |
| JESD-609 Code | e3 | |
| Number of Elements | 7 | |
| Number of Terminals | 35 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 350 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN OVER NICKEL | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 710 ns | |
| Turn-on Time-Nom (ton) | 130 ns | |
| VCEsat-Max | 2.4 V |
Alternate Parts for MUBW50-12E8
This table gives cross-reference parts and alternative options found for MUBW50-12E8. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MUBW50-12E8, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MUBW50-12A8 | Insulated Gate Bipolar Transistor, 85A I(C), 1200V V(BR)CES, N-Channel, MODULE-24 | Littelfuse Inc | MUBW50-12E8 vs MUBW50-12A8 |
| BSM50GP120 | Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, MODULE-35 | Infineon Technologies AG | MUBW50-12E8 vs BSM50GP120 |