Datasheets
MUBW35-12A8 by:

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-24

Part Details for MUBW35-12A8 by IXYS Corporation

Overview of MUBW35-12A8 by IXYS Corporation

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Applications Energy and Power Systems

Available Datasheets

Part # Manufacturer Description Datasheet
R5F212A8SNFA#X6 Renesas Electronics Corporation 16-bit Microcontrollers with R8C CPU Core (Non Promotion), LQFP, /Tray
R5F212A8SNFA#V2 Renesas Electronics Corporation 16-bit Microcontrollers with R8C CPU Core (Non Promotion)
R5F212A8SNFP#V2 Renesas Electronics Corporation 16-bit Microcontrollers with R8C CPU Core (Non Promotion)

Price & Stock for MUBW35-12A8

Part # Distributor Description Stock Price Buy
DISTI # MUBW35-12A8
TME Module: IGBT, diode/transistor, buck chopper, Urmax: 1.2kV, Ic: 35A Min Qty: 1 0
  • 1 $73.8900
  • 3 $65.3000
  • 5 $58.6000
$58.6000 / $73.8900 RFQ
New Advantage Corporation IGBT PIM MOD.3PH D.BRID.SEVEN 35A 1200V NPT RoHS: Compliant Min Qty: 1 Package Multiple: 1 22
  • 2 $214.5200
  • 22 $200.2200
$200.2200 / $214.5200 Buy Now

Part Details for MUBW35-12A8

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MUBW35-12A8 Part Data Attributes

MUBW35-12A8 IXYS Corporation
Buy Now Datasheet
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MUBW35-12A8 IXYS Corporation Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code MODULE
Package Description MODULE-24
Pin Count 24
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 50 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X24
JESD-609 Code e3
Number of Elements 7
Number of Terminals 24
Operating Temperature-Max 125 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 225 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 570 ns
Turn-on Time-Nom (ton) 170 ns
VCEsat-Max 3.1 V

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