Datasheets
MUBW15-12A7 by:

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel,

Part Details for MUBW15-12A7 by IXYS Corporation

Overview of MUBW15-12A7 by IXYS Corporation

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Available Datasheets

Part # Manufacturer Description Datasheet
R5F212A7SNFA#V2 Renesas Electronics Corporation 16-bit Microcontrollers with R8C CPU Core (Non Promotion)
R5F212A7SDFP#X6 Renesas Electronics Corporation 16-bit Microcontrollers with R8C CPU Core (Non Promotion)
R5F212A7SNFA#X6 Renesas Electronics Corporation 16-bit Microcontrollers with R8C CPU Core (Non Promotion)

Price & Stock for MUBW15-12A7

Part # Distributor Description Stock Price Buy
DISTI # MUBW15-12A7
TME Module: IGBT, diode/transistor, buck chopper, Urmax: 1.2kV, Ic: 25A Min Qty: 1 0
  • 1 $103.9100
  • 3 $91.8400
  • 6 $82.4600
$82.4600 / $103.9100 RFQ

Part Details for MUBW15-12A7

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MUBW15-12A7 Part Data Attributes

MUBW15-12A7 IXYS Corporation
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MUBW15-12A7 IXYS Corporation Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW SWITCHING LOSS, LOW SATURATION VOLTAGE
Case Connection ISOLATED
Collector Current-Max (IC) 35 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
JESD-30 Code R-XUFM-X24
JESD-609 Code e3
Number of Elements 7
Number of Terminals 24
Operating Temperature-Max 125 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 570 ns
Turn-on Time-Nom (ton) 170 ns

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