MUBW15-12A7
Description: Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel,

Overview of MUBW15-12A7 by IXYS Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 1 listing )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 1 option )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Space Technology Aerospace and Defense Energy and Power Systems

Available Datasheets

Part # Manufacturer Description Datasheet
R5F212A7SNFA#V2 Renesas Electronics Corporation 16-bit Microcontrollers with R8C CPU Core (Non Promotion)
R5F212A7SDFP#X6 Renesas Electronics Corporation 16-bit Microcontrollers with R8C CPU Core (Non Promotion)
R5F212A7SNFA#X6 Renesas Electronics Corporation 16-bit Microcontrollers with R8C CPU Core (Non Promotion)

Price & Stock for MUBW15-12A7 by IXYS Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # MUBW15-12A7
TME Module: IGBT, diode/transistor, buck chopper, Urmax: 1.2kV, Ic: 25A Min Qty: 1 0
  • 1 $107.4000
  • 3 $94.9300
  • 6 $85.2300
$85.2300 / $107.4000 RFQ

CAD Models for MUBW15-12A7 by IXYS Corporation
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There are no models available for this part yet.

Part Data Attributes for MUBW15-12A7 by IXYS Corporation

MUBW15-12A7
IXYS Corporation
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
IXYS CORP
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
LOW SWITCHING LOSS, LOW SATURATION VOLTAGE
Case Connection
ISOLATED
Collector Current-Max (IC)
35 A
Collector-Emitter Voltage-Max
1200 V
Configuration
COMPLEX
JESD-30 Code
R-XUFM-X24
JESD-609 Code
e3
Number of Elements
7
Number of Terminals
24
Operating Temperature-Max
125 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN OVER NICKEL
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
570 ns
Turn-on Time-Nom (ton)
170 ns
Want to compare parts?
  1. MUBW15-12A7
    IXYS Corporation
    Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel,
    VS

Alternate Parts for MUBW15-12A7

This table gives cross-reference parts and alternative options found for MUBW15-12A7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MUBW15-12A7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MUBW10-12A7 Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, IXYS Corporation MUBW15-12A7 vs MUBW10-12A7

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