Part Details for MTP6N10 by Freescale Semiconductor
Overview of MTP6N10 by Freescale Semiconductor
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Part Details for MTP6N10
MTP6N10 CAD Models
MTP6N10 Part Data Attributes
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MTP6N10
Freescale Semiconductor
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Datasheet
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MTP6N10
Freescale Semiconductor
TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,6A I(D),TO-220AB
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MOTOROLA SEMICONDUCTOR PRODUCTS | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
Additional Feature | LEADFORM OPTIONS ARE AVAILABLE | |
Case Connection | DRAIN | |
Configuration | Single | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (Abs) (ID) | 6 A | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 0.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 100 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 50 W | |
Power Dissipation-Max (Abs) | 50 W | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 100 ns | |
Turn-on Time-Max (ton) | 50 ns |