Part Details for MTM8P18 by Motorola Semiconductor Products
Overview of MTM8P18 by Motorola Semiconductor Products
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MTM8P18
MTM8P18 CAD Models
MTM8P18 Part Data Attributes
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MTM8P18
Motorola Semiconductor Products
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Datasheet
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MTM8P18
Motorola Semiconductor Products
Power Field-Effect Transistor, 8A I(D), 180V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MOTOROLA INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 180 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.7 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 120 pF | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 125 W | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 180 ns | |
| Turn-on Time-Max (ton) | 160 ns |
Alternate Parts for MTM8P18
This table gives cross-reference parts and alternative options found for MTM8P18. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTM8P18, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF9230 | 6.5A, 200V, 0.92ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Rochester Electronics LLC | MTM8P18 vs IRF9230 |
| IRF9232 | Power Field-Effect Transistor, 5.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | MTM8P18 vs IRF9232 |
| IRF9240SMD-JQR-B | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, CERAMIC, SMD1, 3 PIN | TT Electronics Resistors | MTM8P18 vs IRF9240SMD-JQR-B |
| IRF9240ED | Power Field-Effect Transistor, 11A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Infineon Technologies AG | MTM8P18 vs IRF9240ED |
| IRF9240 | 11A, 200V, 0.58ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Rochester Electronics LLC | MTM8P18 vs IRF9240 |
| MTM8P20 | Power Field-Effect Transistor, 8A I(D), 200V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Motorola Semiconductor Products | MTM8P18 vs MTM8P20 |
| IRF9240PBF | Power Field-Effect Transistor, 11A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Infineon Technologies AG | MTM8P18 vs IRF9240PBF |
| IRF9232 | Power Field-Effect Transistor, 5.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | MTM8P18 vs IRF9232 |
| 2N6806PBF | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | MTM8P18 vs 2N6806PBF |
| RFM5P12 | Power Field-Effect Transistor, 5A I(D), 120V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | MTM8P18 vs RFM5P12 |