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Part Details for MTI200WX75GD-SMD by Littelfuse Inc
Overview of MTI200WX75GD-SMD by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
Price & Stock for MTI200WX75GD-SMD
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH2694
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Newark | Mosfet Module - Sixpack Isoplus-Dil/ Tube |Littelfuse MTI200WX75GD-SMD Min Qty: 104 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$28.2300 / $29.0900 | Buy Now |
Part Details for MTI200WX75GD-SMD
MTI200WX75GD-SMD CAD Models
MTI200WX75GD-SMD Part Data Attributes:
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MTI200WX75GD-SMD
Littelfuse Inc
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Datasheet
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MTI200WX75GD-SMD
Littelfuse Inc
Power Field-Effect Transistor, 255A I(D), 75V, 0.0013ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | SMALL OUTLINE, R-PDSO-G24 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | ISOLATED | |
| Configuration | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 255 A | |
| Drain-source On Resistance-Max | 0.0013 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G24 | |
| JESD-609 Code | e3 | |
| Number of Elements | 6 | |
| Number of Terminals | 24 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | YES | |
| Terminal Finish | TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |