Datasheets
MTH35N06E by:

Power Field-Effect Transistor, 35A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC

Part Details for MTH35N06E by Motorola Semiconductor Products

Overview of MTH35N06E by Motorola Semiconductor Products

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Applications Industrial Automation Renewable Energy Robotics and Drones

Part Details for MTH35N06E

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MTH35N06E Part Data Attributes

MTH35N06E Motorola Semiconductor Products
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MTH35N06E Motorola Semiconductor Products Power Field-Effect Transistor, 35A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 500 pF
JEDEC-95 Code TO-218AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 150 W
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 120 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 450 ns
Turn-on Time-Max (ton) 510 ns

Alternate Parts for MTH35N06E

This table gives cross-reference parts and alternative options found for MTH35N06E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTH35N06E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFP048PBF Power Field-Effect Transistor, 70A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 International Rectifier MTH35N06E vs IRFP048PBF
MTH40N06 40A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 STMicroelectronics MTH35N06E vs MTH40N06
MTH40N06 40A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC Motorola Mobility LLC MTH35N06E vs MTH40N06
Part Number Description Manufacturer Compare
IRFP048PBF Power Field-Effect Transistor, 70A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 International Rectifier MTH35N06E vs IRFP048PBF
RFG50N05 Power Field-Effect Transistor, 50A I(D), 50V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Harris Semiconductor MTH35N06E vs RFG50N05
MTH40N06 40A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 STMicroelectronics MTH35N06E vs MTH40N06

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