Datasheets
MTD5N06 by:

5A, 60V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

Part Details for MTD5N06 by Motorola Mobility LLC

Overview of MTD5N06 by Motorola Mobility LLC

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Part Details for MTD5N06

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MTD5N06 Part Data Attributes

MTD5N06 Motorola Mobility LLC
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MTD5N06 Motorola Mobility LLC 5A, 60V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 50 pF
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 20 W
Power Dissipation-Max (Abs) 20 W
Pulsed Drain Current-Max (IDM) 14 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 100 ns
Turn-on Time-Max (ton) 50 ns

Alternate Parts for MTD5N06

This table gives cross-reference parts and alternative options found for MTD5N06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD5N06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MTD5N06 TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,5A I(D),TO-252 Freescale Semiconductor MTD5N06 vs MTD5N06
MTD5N06 Power Field-Effect Transistor, 5A I(D), 60V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 Motorola Semiconductor Products MTD5N06 vs MTD5N06
Part Number Description Manufacturer Compare
IRF3710ZSTRLPBF Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier MTD5N06 vs IRF3710ZSTRLPBF
AUIRFS4610 Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier MTD5N06 vs AUIRFS4610
IRF540NSTRLPBF Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier MTD5N06 vs IRF540NSTRLPBF
IRF1405ZPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier MTD5N06 vs IRF1405ZPBF
AUIRFZ46NS Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET International Rectifier MTD5N06 vs AUIRFZ46NS
IRF3710ZSPBF Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier MTD5N06 vs IRF3710ZSPBF
IRF1405PBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier MTD5N06 vs IRF1405PBF
IRFS4321TRRPBF Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier MTD5N06 vs IRFS4321TRRPBF
IRF453 TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,11A I(D),TO-204AA Intersil Corporation MTD5N06 vs IRF453
IRF350 Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products MTD5N06 vs IRF350

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