Datasheets
MTB60N06HD by:

60A, 60V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-03, D2PAK-3

Part Details for MTB60N06HD by Rochester Electronics LLC

Overview of MTB60N06HD by Rochester Electronics LLC

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Part Details for MTB60N06HD

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MTB60N06HD Part Data Attributes

MTB60N06HD Rochester Electronics LLC
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MTB60N06HD Rochester Electronics LLC 60A, 60V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-03, D2PAK-3
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Package Description CASE 418B-03, D2PAK-3
Pin Count 3
Manufacturer Package Code CASE 418B-03
Reach Compliance Code unknown
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 540 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 180 A
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MTB60N06HD

This table gives cross-reference parts and alternative options found for MTB60N06HD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTB60N06HD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MTB60N06HDT4 60A, 60V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC MTB60N06HD vs MTB60N06HDT4
MTB60N06HD 60A, 60V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-03, D2PAK-3 onsemi MTB60N06HD vs MTB60N06HD
Part Number Description Manufacturer Compare
MTB30N06VLT4 30A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC MTB60N06HD vs MTB30N06VLT4
MTB30N06VL 30A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-03, D2PAK-3 onsemi MTB60N06HD vs MTB30N06VL
NTBV45N06T4G Power MOSFET 60V, 45A, 28 mOhm, Single N-Channe,l D2PAK, Logic Level., D2PAK 2 LEAD, 800-REEL, Automotive Qualified onsemi MTB60N06HD vs NTBV45N06T4G
MTB50N06E 50A, 60V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-02, D2PAK-3 Motorola Mobility LLC MTB60N06HD vs MTB50N06E
MTB50N06ET4 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-02, D2PAK-3 Motorola Mobility LLC MTB60N06HD vs MTB50N06ET4
MTB50N06EL Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 418B-02, D2PAK-3 Motorola Semiconductor Products MTB60N06HD vs MTB50N06EL
MTB50N06ET4 Power Field-Effect Transistor, 50A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 418B-02, D2PAK-3 Motorola Semiconductor Products MTB60N06HD vs MTB50N06ET4
MTB60N06HD 60A, 60V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-03, D2PAK-3 onsemi MTB60N06HD vs MTB60N06HD
NTB45N06G Single N-Channel Power MOSFET 60V, 45A, 26mΩ, D2PAK 2 LEAD, 50-TUBE onsemi MTB60N06HD vs NTB45N06G
HUF76429S3ST N-Channel Logic Level UltraFET Power MOSFET 60V, 44A, 25mΩ, D2PAK-3 / TO-263-2, 800-REEL onsemi MTB60N06HD vs HUF76429S3ST

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