Part Details for MTB3N100E by Motorola Mobility LLC
Overview of MTB3N100E by Motorola Mobility LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for MTB3N100E
MTB3N100E CAD Models
MTB3N100E Part Data Attributes:
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MTB3N100E
Motorola Mobility LLC
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Datasheet
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MTB3N100E
Motorola Mobility LLC
3A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MOTOROLA INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 1000 V | |
Drain Current-Max (ID) | 3 A | |
Drain-source On Resistance-Max | 4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for MTB3N100E
This table gives cross-reference parts and alternative options found for MTB3N100E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTB3N100E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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RFP4N100 | 4.3A, 1000V, 3.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | MTB3N100E vs RFP4N100 |
RFP4N100 | Power Field-Effect Transistor, 4.3A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | MTB3N100E vs RFP4N100 |
RFP4N100 | Power Field-Effect Transistor, 4.3A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Fairchild Semiconductor Corporation | MTB3N100E vs RFP4N100 |
MTB3N100E | 3A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET | onsemi | MTB3N100E vs MTB3N100E |
2SK1119 | TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, 2-10P1B, SC-46, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | MTB3N100E vs 2SK1119 |