MTA8ATF1G64HZ-3G2E1
Micron Technology Inc
Description: DDR DRAM Module, 1GX64, CMOS, SODIMM-260

Overview of MTA8ATF1G64HZ-3G2E1 by Micron Technology Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Education and Research Industrial Automation Computing and Data Storage

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Price & Stock for MTA8ATF1G64HZ-3G2E1 by Micron Technology Inc

Part # Manufacturer Description Stock Price Buy
DISTI # 80AH7033
Newark Sdram, Ddr4 Sodimm, 8Gb, 1.6Ghz, Memory Speed:1600Mhz, Module Memory:Pc4-3200, Module Form Factor:260-Pin Ddr4 Sdram So-Dimm, Memory Application:Notebook Sodimm, Memory Configuration:1G X 64Bit, Supply Voltage Min:1.14V Rohs Compliant: Yes |Micron MTA8ATF1G64HZ-3G2E1 RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 63062878
Verical DRAM Module DDR4 SDRAM 8Gbyte 260SODIMM Tray Min Qty: 1 Package Multiple: 1 Date Code: 2131 Americas - 358
  • 1 $78.3150
  • 10 $75.2905
  • 25 $73.3815
  • 50 $71.5760
  • 100 $70.4490
  • 1,000 $69.6095
$69.6095 / $78.3150 Buy Now

CAD Models for MTA8ATF1G64HZ-3G2E1 by Micron Technology Inc
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Part Data Attributes for MTA8ATF1G64HZ-3G2E1 by Micron Technology Inc

MTA8ATF1G64HZ-3G2E1
Micron Technology Inc
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MICRON TECHNOLOGY INC
Package Description
DIMM,
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.36
Date Of Intro
2017-05-26
Samacsys Manufacturer
Micron
Access Mode
SINGLE BANK PAGE BURST
Additional Feature
AUTO/SELF REFRESH; WD-MAX
JESD-30 Code
R-XZMA-N260
Length
69.6 mm
Memory Density
68719476736 bit
Memory IC Type
DDR DRAM MODULE
Memory Width
64
Number of Functions
1
Number of Ports
1
Number of Terminals
260
Number of Words
1073741824 words
Number of Words Code
1000000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
Organization
1GX64
Package Body Material
UNSPECIFIED
Package Code
DIMM
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Seated Height-Max
30.13 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
1.26 V
Supply Voltage-Min (Vsup)
1.14 V
Supply Voltage-Nom (Vsup)
1.2 V
Surface Mount
NO
Technology
CMOS
Temperature Grade
OTHER
Terminal Form
NO LEAD
Terminal Position
ZIG-ZAG
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
3.7 mm
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    Micron Technology Inc
    DDR DRAM Module, 1GX64, CMOS, SODIMM-260
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Alternate Parts for MTA8ATF1G64HZ-3G2E1

This table gives cross-reference parts and alternative options found for MTA8ATF1G64HZ-3G2E1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTA8ATF1G64HZ-3G2E1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MTA8ATF1G64HZ-3G2R1 DDR4 DRAM Module, Micron Technology Inc MTA8ATF1G64HZ-3G2E1 vs MTA8ATF1G64HZ-3G2R1
MTA8ATF1G64HZ-3G2J1 DDR DRAM Module, Micron Technology Inc MTA8ATF1G64HZ-3G2E1 vs MTA8ATF1G64HZ-3G2J1
Part Number Description Manufacturer Compare
MTA8ATF1G64HZ-3G2R1 DDR4 DRAM Module, Micron Technology Inc MTA8ATF1G64HZ-3G2E1 vs MTA8ATF1G64HZ-3G2R1
MTA8ATF1G64HZ-3G2J1 DDR DRAM Module, Micron Technology Inc MTA8ATF1G64HZ-3G2E1 vs MTA8ATF1G64HZ-3G2J1

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