Datasheets
MT4LSDT464HG-662XX by: Micron Technology Inc

Synchronous DRAM Module, 4MX64, 7.5ns, CMOS, SODIMM-144

Part Details for MT4LSDT464HG-662XX by Micron Technology Inc

Overview of MT4LSDT464HG-662XX by Micron Technology Inc

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Part Details for MT4LSDT464HG-662XX

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MT4LSDT464HG-662XX Part Data Attributes

MT4LSDT464HG-662XX Micron Technology Inc
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MT4LSDT464HG-662XX Micron Technology Inc Synchronous DRAM Module, 4MX64, 7.5ns, CMOS, SODIMM-144
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code MODULE
Package Description ,
Pin Count 144
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.24
Access Mode FOUR BANK PAGE BURST
Access Time-Max 7.5 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-XDMA-N144
JESD-609 Code e0
Memory Density 268435456 bit
Memory IC Type SYNCHRONOUS DRAM MODULE
Memory Width 64
Number of Functions 1
Number of Ports 1
Number of Terminals 144
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX64
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Self Refresh YES
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form NO LEAD
Terminal Position DUAL

Alternate Parts for MT4LSDT464HG-662XX

This table gives cross-reference parts and alternative options found for MT4LSDT464HG-662XX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT4LSDT464HG-662XX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IBM13T4644MC-10T DRAM Module, 1MX64, 8ns, CMOS IBM MT4LSDT464HG-662XX vs IBM13T4644MC-10T
THL64V4075BTG-4 IC 4M X 64 EDO DRAM MODULE, 40 ns, DMA144, DIMM-144, Dynamic RAM Toshiba America Electronic Components MT4LSDT464HG-662XX vs THL64V4075BTG-4
CL001T04645MPAT-70 EDO DRAM Module, 4MX64, 70ns, CMOS, DIMM-144 Celestica Inc MT4LSDT464HG-662XX vs CL001T04645MPAT-70
MK31VT464-10YE Synchronous DRAM Module, 4MX64, 9ns, CMOS, SODIMM-144 OKI Electric Industry Co Ltd MT4LSDT464HG-662XX vs MK31VT464-10YE
VP464641641BTS-10 Synchronous DRAM Module, 4MX64, 7ns, CMOS, SODIMM-144 Vanguard International Semiconductor Corporation MT4LSDT464HG-662XX vs VP464641641BTS-10
HYM64V4005GCDL-50 EDO DRAM Module, 4MX64, 50ns, CMOS, SODIMM-144 Infineon Technologies AG MT4LSDT464HG-662XX vs HYM64V4005GCDL-50
WED3DG644V10WD1-M Synchronous DRAM Module, 4MX64, CMOS, SODIMM-144 Microsemi Corporation MT4LSDT464HG-662XX vs WED3DG644V10WD1-M
MT4LSDT464LHG-662B5 Synchronous DRAM Module, 4MX64, 7.5ns, CMOS, SODIMM-144 Micron Technology Inc MT4LSDT464HG-662XX vs MT4LSDT464LHG-662B5
MT4LDT464HG-5XS EDO DRAM Module, 4MX64, 50ns, CMOS, SODIMM-144 Micron Technology Inc MT4LSDT464HG-662XX vs MT4LDT464HG-5XS
WED3DG644V75D1 Synchronous DRAM Module, 4MX64, CMOS, SODIMM-144 Microsemi Corporation MT4LSDT464HG-662XX vs WED3DG644V75D1

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