Part Details for MT4C2M8A1TG-6STR by Micron Technology Inc
Overview of MT4C2M8A1TG-6STR by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
2SK1316STR-E | Renesas Electronics Corporation | Silicon N Channel MOSFET | |
2SJ506STR-E | Renesas Electronics Corporation | Pch Single Power Mosfet -30V -10A 85Mohm DPAK(S)/To-252 | |
2SK1636STR-E | Renesas Electronics Corporation | Switching N-Channel Power Mosfet, LDPAK(S)-(1), /Embossed Tape |
Part Details for MT4C2M8A1TG-6STR
MT4C2M8A1TG-6STR CAD Models
MT4C2M8A1TG-6STR Part Data Attributes
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MT4C2M8A1TG-6STR
Micron Technology Inc
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Datasheet
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MT4C2M8A1TG-6STR
Micron Technology Inc
Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, TSOP-28
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICRON TECHNOLOGY INC | |
Part Package Code | TSOP | |
Package Description | TSOP2, | |
Pin Count | 28 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FAST PAGE | |
Access Time-Max | 60 ns | |
Additional Feature | RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH | |
JESD-30 Code | R-PDSO-G28 | |
JESD-609 Code | e0 | |
Length | 18.41 mm | |
Memory Density | 16777216 bit | |
Memory IC Type | FAST PAGE DRAM | |
Memory Width | 8 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 28 | |
Number of Words | 2097152 words | |
Number of Words Code | 2000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 2MX8 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Supply Voltage-Max (Vsup) | 5.5 V | |
Supply Voltage-Min (Vsup) | 4.5 V | |
Supply Voltage-Nom (Vsup) | 5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 1.27 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for MT4C2M8A1TG-6STR
This table gives cross-reference parts and alternative options found for MT4C2M8A1TG-6STR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT4C2M8A1TG-6STR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MSM5117800B-60TS-L | Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-28 | OKI Electric Industry Co Ltd | MT4C2M8A1TG-6STR vs MSM5117800B-60TS-L |
GM71C17800CT-6 | Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, TSOP2-28 | SK Hynix Inc | MT4C2M8A1TG-6STR vs GM71C17800CT-6 |
MT4C2M8B2TG-6STR | Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, TSOP-28 | Micron Technology Inc | MT4C2M8A1TG-6STR vs MT4C2M8B2TG-6STR |
MSM5116800C-60TS-K | Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-28 | LAPIS Semiconductor Co Ltd | MT4C2M8A1TG-6STR vs MSM5116800C-60TS-K |
M5M417800CTP-6ST | Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-28 | Mitsubishi Electric | MT4C2M8A1TG-6STR vs M5M417800CTP-6ST |
MT4C2M8A1TG-6 | Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, TSOP-28 | Micron Technology Inc | MT4C2M8A1TG-6STR vs MT4C2M8A1TG-6 |
IBM0117800T3-60 | Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 X 0.725 INCH, TSOP2-28 | IBM | MT4C2M8A1TG-6STR vs IBM0117800T3-60 |
UPD42S16800G5-60-7JD | Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, TSOP2-28 | NEC Electronics America Inc | MT4C2M8A1TG-6STR vs UPD42S16800G5-60-7JD |
UPD42S16800G5-60-7JD | 2MX8 FAST PAGE DRAM, 60ns, PDSO28, 0.400 INCH, PLASTIC, TSOP2-28 | Renesas Electronics Corporation | MT4C2M8A1TG-6STR vs UPD42S16800G5-60-7JD |
MT4C2M8B2TG-6S | Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, TSOP-28 | Micron Technology Inc | MT4C2M8A1TG-6STR vs MT4C2M8B2TG-6S |