Part Details for MT48H4M32LFB5-6:K by Micron Technology Inc
Overview of MT48H4M32LFB5-6:K by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MT48H4M32LFB5-6:K
MT48H4M32LFB5-6:K CAD Models
MT48H4M32LFB5-6:K Part Data Attributes
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MT48H4M32LFB5-6:K
Micron Technology Inc
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Datasheet
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MT48H4M32LFB5-6:K
Micron Technology Inc
4MX32 SYNCHRONOUS DRAM, 5ns, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | BGA | |
| Package Description | VFBGA, BGA90,9X15,32 | |
| Pin Count | 90 | |
| Reach Compliance Code | compliant | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PBGA-B90 | |
| JESD-609 Code | e1 | |
| Length | 13 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 90 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX32 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | VFBGA | |
| Package Equivalence Code | BGA90,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Power Supplies | 1.8 V | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1 mm | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.0002 A | |
| Supply Current-Max | 0.1 mA | |
| Supply Voltage-Max (Vsup) | 1.95 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Width | 8 mm |
Alternate Parts for MT48H4M32LFB5-6:K
This table gives cross-reference parts and alternative options found for MT48H4M32LFB5-6:K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT48H4M32LFB5-6:K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4M563233E-EG1H0 | Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | MT48H4M32LFB5-6:K vs K4M563233E-EG1H0 |
| K4M28323PH-HG1L0 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, ROHS COMPLIANT, FBGA-90 | Samsung Semiconductor | MT48H4M32LFB5-6:K vs K4M28323PH-HG1L0 |
| K4M56323PG-HF900 | Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | MT48H4M32LFB5-6:K vs K4M56323PG-HF900 |
| K4S56323PF-HG900 | Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | MT48H4M32LFB5-6:K vs K4S56323PF-HG900 |
| K4S28323LE-FS1H0 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, FBGA-90 | Samsung Semiconductor | MT48H4M32LFB5-6:K vs K4S28323LE-FS1H0 |
| MT46H8M32LFB5-5IT:H | DDR DRAM, 8MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 | Micron Technology Inc | MT48H4M32LFB5-6:K vs MT46H8M32LFB5-5IT:H |
| HY5W2A2F-B | Synchronous DRAM, 4MX32, 9ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90 | SK Hynix Inc | MT48H4M32LFB5-6:K vs HY5W2A2F-B |
| K4M28323LH-HG750 | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | MT48H4M32LFB5-6:K vs K4M28323LH-HG750 |
| MT46H8M32LFB5-75IT:H | DDR DRAM, 8MX32, 6ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 | Micron Technology Inc | MT48H4M32LFB5-6:K vs MT46H8M32LFB5-75IT:H |
| K4S283234F-MN1L | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, CSP, FBGA-90 | Samsung Semiconductor | MT48H4M32LFB5-6:K vs K4S283234F-MN1L |