Memory
MT48H4M16LFB4-75IT:H
Micron Technology Inc
Description: Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, VFBGA-54

Overview of MT48H4M16LFB4-75IT:H by Micron Technology Inc

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Price & Stock for MT48H4M16LFB4-75IT:H by Micron Technology Inc

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   36
RFQ

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Part Data Attributes for MT48H4M16LFB4-75IT:H by Micron Technology Inc

MT48H4M16LFB4-75IT:H
Micron Technology Inc
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MICRON TECHNOLOGY INC
Part Package Code
BGA
Package Description
VFBGA, BGA54,9X9,32
Pin Count
54
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
6 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
133 MHz
I/O Type
COMMON
Interleaved Burst Length
1,2,4,8
JESD-30 Code
S-PBGA-B54
JESD-609 Code
e1
Length
8 mm
Memory Density
67108864 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
54
Number of Words
4194304 words
Number of Words Code
4000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Organization
4MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
VFBGA
Package Equivalence Code
BGA54,9X9,32
Package Shape
SQUARE
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Qualification Status
Not Qualified
Refresh Cycles
4096
Seated Height-Max
1 mm
Self Refresh
YES
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max
0.00001 A
Supply Current-Max
0.075 mA
Supply Voltage-Max (Vsup)
1.95 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Finish
TIN SILVER COPPER
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Width
8 mm
Want to compare parts?
  1. MT48H4M16LFB4-75IT:H
    Micron Technology Inc
    Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, VFBGA-54
    VS

Alternate Parts for MT48H4M16LFB4-75IT:H

This table gives cross-reference parts and alternative options found for MT48H4M16LFB4-75IT:H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT48H4M16LFB4-75IT:H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MT48H4M16LFB4-75:H Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, VFBGA-54 Micron Technology Inc MT48H4M16LFB4-75IT:H vs MT48H4M16LFB4-75:H
K4M64163PH-BG750 Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54 Samsung Semiconductor MT48H4M16LFB4-75IT:H vs K4M64163PH-BG750
K4M64163PH-BF750 Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54 Samsung Semiconductor MT48H4M16LFB4-75IT:H vs K4M64163PH-BF750
IS42VM16400G-75BLE Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, LEAD FREE, FBGA-54 Integrated Silicon Solution Inc MT48H4M16LFB4-75IT:H vs IS42VM16400G-75BLE
EDL6416CABB-10 Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, FBGA-54 Elpida Memory Inc MT48H4M16LFB4-75IT:H vs EDL6416CABB-10
IS42VS16400E-75BLI Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, BGA-54 Integrated Silicon Solution Inc MT48H4M16LFB4-75IT:H vs IS42VS16400E-75BLI
EDL6416CABH-10-E Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, LEAD FREE, FBGA-54 Elpida Memory Inc MT48H4M16LFB4-75IT:H vs EDL6416CABH-10-E
MT48H4M16LFB4-8:H Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, 8 X 8 MM, VFBGA-54 Micron Technology Inc MT48H4M16LFB4-75IT:H vs MT48H4M16LFB4-8:H
Part Number Description Manufacturer Compare
K4M64163LK-BL1H0 Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54 Samsung Semiconductor MT48H4M16LFB4-75IT:H vs K4M64163LK-BL1H0
K4S64163LH-BC1H0 Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54 Samsung Semiconductor MT48H4M16LFB4-75IT:H vs K4S64163LH-BC1H0
K4S64163LH-RL1H0 Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, FBGA-54 Samsung Semiconductor MT48H4M16LFB4-75IT:H vs K4S64163LH-RL1H0
K4S641633H-BG1H0 Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54 Samsung Semiconductor MT48H4M16LFB4-75IT:H vs K4S641633H-BG1H0
K4M64163LK-RL1L0 Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, FBGA-54 Samsung Semiconductor MT48H4M16LFB4-75IT:H vs K4M64163LK-RL1L0
M2L64S40DWG-7 Synchronous DRAM, 4MX16, 8ns, CMOS, PBGA54, BGA-54 Mitsubishi Electric MT48H4M16LFB4-75IT:H vs M2L64S40DWG-7
K4S641633F-BN75 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, CSP-54 Samsung Semiconductor MT48H4M16LFB4-75IT:H vs K4S641633F-BN75
MT48LC4M16A2F4-75LIT IC,SDRAM,4X1MX16,CMOS,BGA,54PIN,PLASTIC Micron Technology Inc MT48H4M16LFB4-75IT:H vs MT48LC4M16A2F4-75LIT
K4M64163PK-RC900 Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, FBGA-54 Samsung Semiconductor MT48H4M16LFB4-75IT:H vs K4M64163PK-RC900
K4S64163LF-RN1L Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, CSP-54 Samsung Semiconductor MT48H4M16LFB4-75IT:H vs K4S64163LF-RN1L

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