Datasheets
MT47H16M16BG-37E by: Micron Technology Inc

DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 14 MM, LEAD FREE, FBGA-84

Part Details for MT47H16M16BG-37E by Micron Technology Inc

Overview of MT47H16M16BG-37E by Micron Technology Inc

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Part Details for MT47H16M16BG-37E

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MT47H16M16BG-37E Part Data Attributes

MT47H16M16BG-37E Micron Technology Inc
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MT47H16M16BG-37E Micron Technology Inc DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 14 MM, LEAD FREE, FBGA-84
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code BGA
Package Description LFBGA, BGA84,9X15,32
Pin Count 84
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.24
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 266 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84
JESD-609 Code e1
Length 14 mm
Memory Density 268435456 bit
Memory IC Type DDR2 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 84
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 16MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LFBGA
Package Equivalence Code BGA84,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.3 mm
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max 0.005 A
Supply Current-Max 0.17 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for MT47H16M16BG-37E

This table gives cross-reference parts and alternative options found for MT47H16M16BG-37E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT47H16M16BG-37E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT47H16M16BG-37E:B DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 14 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc MT47H16M16BG-37E vs MT47H16M16BG-37E:B
MT47H16M16BG-37EIT:B DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 14 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc MT47H16M16BG-37E vs MT47H16M16BG-37EIT:B
MT47H16M16BG-37EAT:B DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 14 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc MT47H16M16BG-37E vs MT47H16M16BG-37EAT:B
MT47H16M16BG-37EL:B DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 14 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc MT47H16M16BG-37E vs MT47H16M16BG-37EL:B
Part Number Description Manufacturer Compare
MT47H16M16BG-5EAT:B DDR DRAM, 16MX16, 0.6ns, CMOS, PBGA84, 8 X 14 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc MT47H16M16BG-37E vs MT47H16M16BG-5EAT:B
K4N56163QF-GC370 DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, FBGA-84 Samsung Semiconductor MT47H16M16BG-37E vs K4N56163QF-GC370
EDE2516AASE-4A-E DDR DRAM, 16MX16, 0.6ns, CMOS, PBGA84, LEAD FREE, FBGA-84 Elpida Memory Inc MT47H16M16BG-37E vs EDE2516AASE-4A-E
K4N56163QF-ZC330 DDR DRAM, 16MX16, 0.47ns, CMOS, PBGA84, LEAD FREE, FBGA-84 Samsung Semiconductor MT47H16M16BG-37E vs K4N56163QF-ZC330
MT47H16M16BG-37EL:B DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, 8 X 14 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc MT47H16M16BG-37E vs MT47H16M16BG-37EL:B
HY5PS561621LF-E4 DDR DRAM, 16MX16, 0.6ns, CMOS, PBGA84, FBGA-84 SK Hynix Inc MT47H16M16BG-37E vs HY5PS561621LF-E4
HYB18TC256160BF-5 DDR DRAM, 16MX16, 0.6ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Qimonda AG MT47H16M16BG-37E vs HYB18TC256160BF-5
K4N56163QF-GC33 DDR DRAM, 16MX16, 0.47ns, CMOS, PBGA84, FBGA-84 Samsung Semiconductor MT47H16M16BG-37E vs K4N56163QF-GC33
HYB18TC256160BF-3.7 DDR DRAM, 16MX16, 0.5ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Qimonda AG MT47H16M16BG-37E vs HYB18TC256160BF-3.7
K4N56163QF-GC200 DDR DRAM, 16MX16, 0.3ns, CMOS, PBGA84, FBGA-84 Samsung Semiconductor MT47H16M16BG-37E vs K4N56163QF-GC200

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