Part Details for MT47H128M4JN-187E:F by Micron Technology Inc
Overview of MT47H128M4JN-187E:F by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| LM2917MX/NOPB | Texas Instruments | Frequency to Voltage Converter 14-SOIC -40 to 85 | |
| LM2907MX/NOPB | Texas Instruments | Frequency to Voltage Converter 14-SOIC -40 to 85 | |
| LM2917M/NOPB | Texas Instruments | Frequency to Voltage Converter 14-SOIC -40 to 85 |
Part Details for MT47H128M4JN-187E:F
MT47H128M4JN-187E:F CAD Models
MT47H128M4JN-187E:F Part Data Attributes
|
|
MT47H128M4JN-187E:F
Micron Technology Inc
Buy Now
Datasheet
|
Compare Parts:
MT47H128M4JN-187E:F
Micron Technology Inc
DDR DRAM, 128MX4, 0.35ns, CMOS, PBGA60, FBGA-60
|
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Package Description | TFBGA, | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.35 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PBGA-B60 | |
| Length | 10 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR DRAM | |
| Memory Width | 4 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 60 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 128MX4 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 8 mm |
Alternate Parts for MT47H128M4JN-187E:F
This table gives cross-reference parts and alternative options found for MT47H128M4JN-187E:F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT47H128M4JN-187E:F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT47H128M4JN-187E:G | DDR DRAM, 128MX4, 0.35ns, CMOS, PBGA60, FBGA-60 | Micron Technology Inc | MT47H128M4JN-187E:F vs MT47H128M4JN-187E:G |
| MT47H128M4JN-187EL:G | DDR DRAM, 128MX4, 0.35ns, CMOS, PBGA60, FBGA-60 | Micron Technology Inc | MT47H128M4JN-187E:F vs MT47H128M4JN-187EL:G |
| MT47H128M4JN-187ELIT:G | DDR DRAM, 128MX4, 0.35ns, CMOS, PBGA60, FBGA-60 | Micron Technology Inc | MT47H128M4JN-187E:F vs MT47H128M4JN-187ELIT:G |
| MT47H128M4JN-187ELAT:F | DDR DRAM, 128MX4, 0.35ns, CMOS, PBGA60, FBGA-60 | Micron Technology Inc | MT47H128M4JN-187E:F vs MT47H128M4JN-187ELAT:F |
| MT47H128M4JN-187EIT:G | DDR DRAM, 128MX4, 0.35ns, CMOS, PBGA60, FBGA-60 | Micron Technology Inc | MT47H128M4JN-187E:F vs MT47H128M4JN-187EIT:G |
| MT47H128M4JN-187EL:F | DDR DRAM, 128MX4, 0.35ns, CMOS, PBGA60, FBGA-60 | Micron Technology Inc | MT47H128M4JN-187E:F vs MT47H128M4JN-187EL:F |
| MT47H128M4JN-187EAT:F | DDR DRAM, 128MX4, 0.35ns, CMOS, PBGA60, FBGA-60 | Micron Technology Inc | MT47H128M4JN-187E:F vs MT47H128M4JN-187EAT:F |
| MT47H128M4JN-187EIT:F | DDR DRAM, 128MX4, 0.35ns, CMOS, PBGA60, FBGA-60 | Micron Technology Inc | MT47H128M4JN-187E:F vs MT47H128M4JN-187EIT:F |
| MT47H128M4JN-187ELAT:G | DDR DRAM, 128MX4, 0.35ns, CMOS, PBGA60, FBGA-60 | Micron Technology Inc | MT47H128M4JN-187E:F vs MT47H128M4JN-187ELAT:G |