Datasheets
MT47H128M4CB-37E:D by: Micron Technology Inc

DDR DRAM, 128MX4, 0.5ns, CMOS, PBGA60

Part Details for MT47H128M4CB-37E:D by Micron Technology Inc

Overview of MT47H128M4CB-37E:D by Micron Technology Inc

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Part # Manufacturer Description Datasheet
DBL5W5P543A40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 5W5 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Without Accessory on PCB.
DEL2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Harpoons for 2.4mm PCB Thickness.
DC8W8P500H30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 8W8 Pin Right Angle Solder 30A, Europe Standard, 200 Cycles, Front: Without Accessory, Back: Harpoons for 2.4mm PCB Thickness.

Part Details for MT47H128M4CB-37E:D

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MT47H128M4CB-37E:D Part Data Attributes

MT47H128M4CB-37E:D Micron Technology Inc
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MT47H128M4CB-37E:D Micron Technology Inc DDR DRAM, 128MX4, 0.5ns, CMOS, PBGA60
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Package Description FBGA, BGA60,9X11,32
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Time-Max 0.5 ns
Clock Frequency-Max (fCLK) 266 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B60
JESD-609 Code e3
Memory Density 536870912 bit
Memory IC Type DDR2 DRAM
Memory Width 4
Moisture Sensitivity Level 1
Number of Terminals 60
Number of Words 134217728 words
Number of Words Code 128000000
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 128MX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code FBGA
Package Equivalence Code BGA60,9X11,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Sequential Burst Length 4,8
Standby Current-Max 0.007 A
Supply Current-Max 0.225 mA
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish MATTE TIN
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM

Alternate Parts for MT47H128M4CB-37E:D

This table gives cross-reference parts and alternative options found for MT47H128M4CB-37E:D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT47H128M4CB-37E:D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT47H128M4GB-37EL:B DDR DRAM, 128MX4, 0.5ns, CMOS, PBGA60, 12 X 10 MM, FBGA-60 Micron Technology Inc MT47H128M4CB-37E:D vs MT47H128M4GB-37EL:B
MT47H128M4F6-37EL:D DDR DRAM, 128MX4, 0.5ns, CMOS, PBGA60, 10 X 10 MM, FBGA-60 Micron Technology Inc MT47H128M4CB-37E:D vs MT47H128M4F6-37EL:D
MT47H128M4CB-37EL:D DDR DRAM, 128MX4, 0.5ns, CMOS, PBGA60 Micron Technology Inc MT47H128M4CB-37E:D vs MT47H128M4CB-37EL:D
MT47H128M4CF-37E:F DDR DRAM, 128MX4, 0.5ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H128M4CB-37E:D vs MT47H128M4CF-37E:F
MT47H128M4B6-37E:B DDR DRAM, 128MX4, 0.5ns, CMOS, PBGA60 Micron Technology Inc MT47H128M4CB-37E:D vs MT47H128M4B6-37E:B
MT47H128M4CB-37EL:B DDR DRAM, 128MX4, 0.5ns, CMOS, PBGA60, 12 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H128M4CB-37E:D vs MT47H128M4CB-37EL:B
MT47H128M4B6-37EL:B DDR DRAM, 128MX4, 0.5ns, CMOS, PBGA60 Micron Technology Inc MT47H128M4CB-37E:D vs MT47H128M4B6-37EL:B
MT47H128M4F6-37E:D DDR DRAM, 128MX4, 0.5ns, CMOS, PBGA60, 10 X 10 MM, FBGA-60 Micron Technology Inc MT47H128M4CB-37E:D vs MT47H128M4F6-37E:D
MT47H128M4CF-37EL:F DDR DRAM, 128MX4, 0.5ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H128M4CB-37E:D vs MT47H128M4CF-37EL:F
Part Number Description Manufacturer Compare
MT46V128M4FN-6TLIT:F DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, FBGA-60 Micron Technology Inc MT47H128M4CB-37E:D vs MT46V128M4FN-6TLIT:F
NT5TU128M4AF-3C DDR DRAM, 128MX4, CMOS, PBGA60, 0.80 MM PITCH, FBGA-60 Nanya Technology Corporation MT47H128M4CB-37E:D vs NT5TU128M4AF-3C
MT47H128M4CF-3ELIT:G DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H128M4CB-37E:D vs MT47H128M4CF-3ELIT:G
V59C1512404QDLP3H DDR DRAM, 128MX4, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc MT47H128M4CB-37E:D vs V59C1512404QDLP3H
V59C1512404QDUJ5I DDR DRAM, 128MX4, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc MT47H128M4CB-37E:D vs V59C1512404QDUJ5I
MT47H128M4CF-3LIT:F DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H128M4CB-37E:D vs MT47H128M4CF-3LIT:F
MT46V128M4BN-5BL:C DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, FBGA-60 Micron Technology Inc MT47H128M4CB-37E:D vs MT46V128M4BN-5BL:C
MT46V128M4BN-75L:D DDR DRAM, 128MX4, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60 Micron Technology Inc MT47H128M4CB-37E:D vs MT46V128M4BN-75L:D
MT47H128M4CB-3IT:B DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 12 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H128M4CB-37E:D vs MT47H128M4CB-3IT:B
MT47H128M4CF-3IT:G DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H128M4CB-37E:D vs MT47H128M4CF-3IT:G

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