Datasheets
MT47H128M4B6-3EIT:B by: Micron Technology Inc

DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60

Part Details for MT47H128M4B6-3EIT:B by Micron Technology Inc

Overview of MT47H128M4B6-3EIT:B by Micron Technology Inc

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Part Details for MT47H128M4B6-3EIT:B

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MT47H128M4B6-3EIT:B Part Data Attributes

MT47H128M4B6-3EIT:B Micron Technology Inc
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MT47H128M4B6-3EIT:B Micron Technology Inc DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Package Description FBGA, BGA60,9X11,32
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Time-Max 0.45 ns
Clock Frequency-Max (fCLK) 333 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B60
JESD-609 Code e3
Memory Density 536870912 bit
Memory IC Type DDR2 DRAM
Memory Width 4
Moisture Sensitivity Level 1
Number of Terminals 60
Number of Words 134217728 words
Number of Words Code 128000000
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 128MX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code FBGA
Package Equivalence Code BGA60,9X11,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Sequential Burst Length 4,8
Standby Current-Max 0.007 A
Supply Current-Max 0.24 mA
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish MATTE TIN
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM

Alternate Parts for MT47H128M4B6-3EIT:B

This table gives cross-reference parts and alternative options found for MT47H128M4B6-3EIT:B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT47H128M4B6-3EIT:B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT47H128M4B6-3ELIT IC,SDRAM,DDR,4X32MX4,CMOS,BGA,60PIN,PLASTIC Micron Technology Inc MT47H128M4B6-3EIT:B vs MT47H128M4B6-3ELIT
MT47H128M4CB-3ELIT:B DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 12 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H128M4B6-3EIT:B vs MT47H128M4CB-3ELIT:B
MT47H128M4B6-3EIT IC,SDRAM,DDR,4X32MX4,CMOS,BGA,60PIN,PLASTIC Micron Technology Inc MT47H128M4B6-3EIT:B vs MT47H128M4B6-3EIT
MT47H128M4B6-3ELIT:D DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 10 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H128M4B6-3EIT:B vs MT47H128M4B6-3ELIT:D
MT47H128M4B6-3ELIT:B DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60 Micron Technology Inc MT47H128M4B6-3EIT:B vs MT47H128M4B6-3ELIT:B
MT47H128M4CB-3EIT:B DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 12 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H128M4B6-3EIT:B vs MT47H128M4CB-3EIT:B
MT47H128M4GB-3ELIT:B DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 12 X 10 MM, FBGA-60 Micron Technology Inc MT47H128M4B6-3EIT:B vs MT47H128M4GB-3ELIT:B
MT47H128M4GB-3EIT:B DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 12 X 10 MM, FBGA-60 Micron Technology Inc MT47H128M4B6-3EIT:B vs MT47H128M4GB-3EIT:B
MT47H128M4JN-3EIT:F DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 8 X 10 MM, FBGA-60 Micron Technology Inc MT47H128M4B6-3EIT:B vs MT47H128M4JN-3EIT:F
MT47H128M4CF-3ELIT:F DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H128M4B6-3EIT:B vs MT47H128M4CF-3ELIT:F
Part Number Description Manufacturer Compare
MT47H128M4CF-3IT:G DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H128M4B6-3EIT:B vs MT47H128M4CF-3IT:G
V58C2512404SDUJ6I DDR DRAM, 128MX4, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc MT47H128M4B6-3EIT:B vs V58C2512404SDUJ6I
HY5DU12422CFP-D43 DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 SK Hynix Inc MT47H128M4B6-3EIT:B vs HY5DU12422CFP-D43
V59C1512404QDUJ37I DDR DRAM, 128MX4, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc MT47H128M4B6-3EIT:B vs V59C1512404QDUJ37I
HY5DU12422BLF-D43 DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60, FBGA-60 SK Hynix Inc MT47H128M4B6-3EIT:B vs HY5DU12422BLF-D43
MT47H128M4JN-25ELIT:F DDR DRAM, 128MX4, 0.4ns, CMOS, PBGA60, 8 X 10 MM, FBGA-60 Micron Technology Inc MT47H128M4B6-3EIT:B vs MT47H128M4JN-25ELIT:F
V59C1512404QDLP25I DDR DRAM, 128MX4, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc MT47H128M4B6-3EIT:B vs V59C1512404QDLP25I
V58C2512404SDLJ7E DDR DRAM, 128MX4, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc MT47H128M4B6-3EIT:B vs V58C2512404SDLJ7E
MT46V128M4BN-5BL:D DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60 Micron Technology Inc MT47H128M4B6-3EIT:B vs MT46V128M4BN-5BL:D
MT47H128M4CF-3LIT:G DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT47H128M4B6-3EIT:B vs MT47H128M4CF-3LIT:G

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