Part Details for MT46V32M16BN-6L:D by Micron Technology Inc
Overview of MT46V32M16BN-6L:D by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| DBL5W5P543A40LF | Amphenol Communications Solutions | D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 5W5 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Without Accessory on PCB. | |
| DEL2V2P543H40LF | Amphenol Communications Solutions | D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Harpoons for 2.4mm PCB Thickness. | |
| DC8W8P500H30LF | Amphenol Communications Solutions | D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 8W8 Pin Right Angle Solder 30A, Europe Standard, 200 Cycles, Front: Without Accessory, Back: Harpoons for 2.4mm PCB Thickness. |
Part Details for MT46V32M16BN-6L:D
MT46V32M16BN-6L:D CAD Models
MT46V32M16BN-6L:D Part Data Attributes
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MT46V32M16BN-6L:D
Micron Technology Inc
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Datasheet
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MT46V32M16BN-6L:D
Micron Technology Inc
DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Package Description | BGA, BGA60,9X12,40/32 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Time-Max | 0.7 ns | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PBGA-B60 | |
| JESD-609 Code | e3 | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 1 | |
| Number of Terminals | 60 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 32MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | BGA | |
| Package Equivalence Code | BGA60,9X12,40/32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.005 A | |
| Supply Current-Max | 0.405 mA | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM |
Alternate Parts for MT46V32M16BN-6L:D
This table gives cross-reference parts and alternative options found for MT46V32M16BN-6L:D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT46V32M16BN-6L:D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MT46V32M16FN-6L:F | Micron Technology Inc | Check for Price | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, FBGA-60 | MT46V32M16BN-6L:D vs MT46V32M16FN-6L:F |
| K4H511638D-ZLB3 | Samsung Semiconductor | Check for Price | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | MT46V32M16BN-6L:D vs K4H511638D-ZLB3 |
| K4H511638F-HCB3 | Samsung Semiconductor | Check for Price | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, | MT46V32M16BN-6L:D vs K4H511638F-HCB3 |
| K4H511638J-BCB3T | Samsung Semiconductor | Check for Price | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | MT46V32M16BN-6L:D vs K4H511638J-BCB3T |
| K4H511638F-HCB30 | Samsung Semiconductor | Check for Price | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | MT46V32M16BN-6L:D vs K4H511638F-HCB30 |
| MT46V32M16BN-6:D | Micron Technology Inc | Check for Price | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | MT46V32M16BN-6L:D vs MT46V32M16BN-6:D |
| K4H511638J-BLB3T | Samsung Semiconductor | Check for Price | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | MT46V32M16BN-6L:D vs K4H511638J-BLB3T |
| MT46V32M16FN-6:D | Micron Technology Inc | Check for Price | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | MT46V32M16BN-6L:D vs MT46V32M16FN-6:D |
| K4H511638G-HLB3 | Samsung Semiconductor | Check for Price | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | MT46V32M16BN-6L:D vs K4H511638G-HLB3 |
| K4H511638G-HLB30 | Samsung Semiconductor | Check for Price | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | MT46V32M16BN-6L:D vs K4H511638G-HLB30 |