Datasheets
MT46V128M4P-6TL:C by: Micron Technology Inc

DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66

Part Details for MT46V128M4P-6TL:C by Micron Technology Inc

Overview of MT46V128M4P-6TL:C by Micron Technology Inc

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Part Details for MT46V128M4P-6TL:C

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MT46V128M4P-6TL:C Part Data Attributes

MT46V128M4P-6TL:C Micron Technology Inc
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MT46V128M4P-6TL:C Micron Technology Inc DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code TSOP
Package Description TSSOP, TSSOP66,.46
Pin Count 66
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 167 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66
JESD-609 Code e3
Length 22.22 mm
Memory Density 536870912 bit
Memory IC Type DDR1 DRAM
Memory Width 4
Number of Functions 1
Number of Ports 1
Number of Terminals 66
Number of Words 134217728 words
Number of Words Code 128000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 128MX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSSOP
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.005 A
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Pitch 0.65 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for MT46V128M4P-6TL:C

This table gives cross-reference parts and alternative options found for MT46V128M4P-6TL:C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT46V128M4P-6TL:C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT46V128M4P-6TL DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc MT46V128M4P-6TL:C vs MT46V128M4P-6TL
MT46V128M4TG-6TL:C DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc MT46V128M4P-6TL:C vs MT46V128M4TG-6TL:C
MT46V128M4TG-6TL DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc MT46V128M4P-6TL:C vs MT46V128M4TG-6TL
MT46V128M4TG-6T DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc MT46V128M4P-6TL:C vs MT46V128M4TG-6T
MT46V128M4P-6T:C DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc MT46V128M4P-6TL:C vs MT46V128M4P-6T:C
Part Number Description Manufacturer Compare
K4H510438F-LCB0 DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 Samsung Electro-Mechanics MT46V128M4P-6TL:C vs K4H510438F-LCB0
MT46V128M4STG-75E:C DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc MT46V128M4P-6TL:C vs MT46V128M4STG-75E:C
V58C2512404SDUI36H DDR DRAM, 128MX4, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc MT46V128M4P-6TL:C vs V58C2512404SDUI36H
V58C2512404SDLI8I DDR DRAM, 128MX4, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc MT46V128M4P-6TL:C vs V58C2512404SDLI8I
MT46V128M4P-75ZLAT:D DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc MT46V128M4P-6TL:C vs MT46V128M4P-75ZLAT:D
K4H510438G-LC/LB3 DDR DRAM, 128MX4, 0.6ns, CMOS, PDSO66, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor MT46V128M4P-6TL:C vs K4H510438G-LC/LB3
K4H510438B-TCA20 DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor MT46V128M4P-6TL:C vs K4H510438B-TCA20
HYB25D512400BR-7.5 DDR DRAM Module, 128MX4, CMOS, PDMA66, 0.400 INCH, PLASTIC, TSSOP2-66 Infineon Technologies AG MT46V128M4P-6TL:C vs HYB25D512400BR-7.5
V58C512404SBLT-5 DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc MT46V128M4P-6TL:C vs V58C512404SBLT-5
MT46V128M4P-5BL DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc MT46V128M4P-6TL:C vs MT46V128M4P-5BL

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