Datasheets
MT41J64M16JT-125:G by: Micron Technology Inc

DDR DRAM, 64MX16, 0.1ns, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96

Part Details for MT41J64M16JT-125:G by Micron Technology Inc

Overview of MT41J64M16JT-125:G by Micron Technology Inc

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Applications Computing and Data Storage

Price & Stock for MT41J64M16JT-125:G

Part # Distributor Description Stock Price Buy
Bristol Electronics   54
RFQ
Quest Components 64M X 16 DDR DRAM, 0.1 ns, PBGA96 43
  • 1 $16.7625
  • 6 $14.9000
  • 18 $13.7825
$13.7825 / $16.7625 Buy Now
NexGen Digital   1
RFQ
Win Source Electronics IC SDRAM 1GBIT 800MHZ 96FBGA / DRAM Chip DDR3 SDRAM 1Gbit 64Mx16 1.5V 96-Pin FBGA Tray 11994
  • 10 $5.3700
  • 23 $4.4060
  • 36 $4.2690
  • 49 $4.1310
  • 63 $3.9930
  • 84 $3.5800
$3.5800 / $5.3700 Buy Now

Part Details for MT41J64M16JT-125:G

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MT41J64M16JT-125:G Part Data Attributes

MT41J64M16JT-125:G Micron Technology Inc
Buy Now Datasheet
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MT41J64M16JT-125:G Micron Technology Inc DDR DRAM, 64MX16, 0.1ns, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code BGA
Package Description TFBGA, BGA96,9X16,32
Pin Count 96
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.32
Samacsys Manufacturer Micron
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.1 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 800 MHz
I/O Type COMMON
Interleaved Burst Length 8
JESD-30 Code R-PBGA-B96
JESD-609 Code e1
Length 14 mm
Memory Density 1073741824 bit
Memory IC Type DDR3 DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 96
Number of Words 67108864 words
Number of Words Code 64000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 64MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA96,9X16,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 8
Standby Current-Max 0.012 A
Supply Current-Max 0.3 mA
Supply Voltage-Max (Vsup) 1.575 V
Supply Voltage-Min (Vsup) 1.425 V
Supply Voltage-Nom (Vsup) 1.5 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for MT41J64M16JT-125:G

This table gives cross-reference parts and alternative options found for MT41J64M16JT-125:G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT41J64M16JT-125:G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT41J64M16JT-125EAT:G DDR DRAM, 64MX16, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96 Micron Technology Inc MT41J64M16JT-125:G vs MT41J64M16JT-125EAT:G
MT41J64M16JT-125IT:G DDR DRAM, 64MX16, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96 Micron Technology Inc MT41J64M16JT-125:G vs MT41J64M16JT-125IT:G
Part Number Description Manufacturer Compare
IDSH1G-04A1F1C-13G DDR DRAM, 64MX16, 20ns, CMOS, PBGA96, 0.80 MM PITCH, GREEN, PLASTIC, TFBGA-96 Qimonda AG MT41J64M16JT-125:G vs IDSH1G-04A1F1C-13G
IDSH1G-04A1F1C-10G DDR DRAM, 64MX16, 20ns, CMOS, PBGA96, 0.80 MM PITCH, GREEN, PLASTIC, TFBGA-96 Qimonda AG MT41J64M16JT-125:G vs IDSH1G-04A1F1C-10G
K4W1G1646G-BC080 DDR DRAM, 64MX16, 20ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 Samsung Semiconductor MT41J64M16JT-125:G vs K4W1G1646G-BC080
H5TQ1G63DFR-11C DDR DRAM, 64MX16, 20ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 SK Hynix Inc MT41J64M16JT-125:G vs H5TQ1G63DFR-11C
IS43TR16640A-187FBL DDR DRAM, 64MX16, 13.125ns, CMOS, PBGA96, 9 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-96 Integrated Silicon Solution Inc MT41J64M16JT-125:G vs IS43TR16640A-187FBL
EDJ1116BASE-AG-E DDR DRAM, 64MX16, 0.3ns, CMOS, PBGA96, ROHS COMPLIANT, FBGA-96 Elpida Memory Inc MT41J64M16JT-125:G vs EDJ1116BASE-AG-E
K4W1G1646E-HC1A0 DDR DRAM, 64MX16, 0.18ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 Samsung Semiconductor MT41J64M16JT-125:G vs K4W1G1646E-HC1A0
NT5CB64M16DP-BE DDR DRAM, 64MX16, 0.3ns, CMOS, PBGA96, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, WBGA-96 Nanya Technology Corporation MT41J64M16JT-125:G vs NT5CB64M16DP-BE
H5TQ1G63AFPR-H9C DDR DRAM, 64MX16, 0.255ns, CMOS, PBGA96, HALOGEN FREE, FPBGA-96 SK Hynix Inc MT41J64M16JT-125:G vs H5TQ1G63AFPR-H9C
K4B1G1646G-BCNB0 DDR DRAM, 64MX16, 0.18ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 Samsung Semiconductor MT41J64M16JT-125:G vs K4B1G1646G-BCNB0

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