Datasheets
MT18VDDF6472HG-265 by: Micron Technology Inc

DDR DRAM Module, 64MX72, 0.75ns, CMOS, PDMA200

Part Details for MT18VDDF6472HG-265 by Micron Technology Inc

Overview of MT18VDDF6472HG-265 by Micron Technology Inc

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Applications Computing and Data Storage

Part Details for MT18VDDF6472HG-265

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MT18VDDF6472HG-265 Part Data Attributes

MT18VDDF6472HG-265 Micron Technology Inc
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MT18VDDF6472HG-265 Micron Technology Inc DDR DRAM Module, 64MX72, 0.75ns, CMOS, PDMA200
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Time-Max 0.75 ns
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
JESD-30 Code R-PDMA-N200
Memory Density 4831838208 bit
Memory IC Type DDR DRAM MODULE
Memory Width 72
Moisture Sensitivity Level 1
Number of Terminals 200
Number of Words 67108864 words
Number of Words Code 64000000
Operating Temperature-Max 65 °C
Operating Temperature-Min
Organization 64MX72
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code DIMM
Package Equivalence Code DIMM200,24
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Refresh Cycles 8192
Supply Current-Max 4.23 mA
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form NO LEAD
Terminal Pitch 0.6 mm
Terminal Position DUAL

Alternate Parts for MT18VDDF6472HG-265

This table gives cross-reference parts and alternative options found for MT18VDDF6472HG-265. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT18VDDF6472HG-265, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT18VDDF6472HY-265 DDR DRAM Module, 64MX72, 0.75ns, CMOS, PDMA200 Micron Technology Inc MT18VDDF6472HG-265 vs MT18VDDF6472HY-265
Part Number Description Manufacturer Compare
W3EG7266S202BD4F DDR DRAM Module, 64MX72, 0.8ns, CMOS, LEAD FREE, SO-DIMM-200 Microsemi Corporation MT18VDDF6472HG-265 vs W3EG7266S202BD4F
WV3HG232M72EEU534D4-SG DDR DRAM Module, 64MX72, 0.5ns, CMOS, ROHS COMPLIANT, SODIMM-200 Microsemi Corporation MT18VDDF6472HG-265 vs WV3HG232M72EEU534D4-SG
W3EG7266S262AD4IG DDR DRAM Module, 64MX72, 0.75ns, CMOS, ROHS COMPLIANT, SO-DIMM-200 Microsemi Corporation MT18VDDF6472HG-265 vs W3EG7266S262AD4IG
W3EG7266S262BD4 DDR DRAM Module, 64MX72, 0.75ns, CMOS, SODIMM-200 Microsemi Corporation MT18VDDF6472HG-265 vs W3EG7266S262BD4
MT9VDDT6472PH-202XX DDR DRAM Module, 64MX72, 0.8ns, CMOS, SODIMM-200 Micron Technology Inc MT18VDDF6472HG-265 vs MT9VDDT6472PH-202XX
MT18VDDF6472HY-335XX DDR DRAM Module, 64MX72, 0.7ns, CMOS, LEAD FREE, SODIMM-200 Micron Technology Inc MT18VDDF6472HG-265 vs MT18VDDF6472HY-335XX
W3EG7266S202BD4 DDR DRAM Module, 64MX72, 0.8ns, CMOS, SODIMM-200 Microsemi Corporation MT18VDDF6472HG-265 vs W3EG7266S202BD4
WV3HG64M72EEU403PD4ISG DDR DRAM Module, 64MX72, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 Microsemi Corporation MT18VDDF6472HG-265 vs WV3HG64M72EEU403PD4ISG
W3EG7266S202BD4IF DDR DRAM Module, 64MX72, 0.8ns, CMOS, LEAD FREE, SO-DIMM-200 Microsemi Corporation MT18VDDF6472HG-265 vs W3EG7266S202BD4IF
M485L6523BU0-CB0 DDR DRAM Module, 64MX72, 0.75ns, CMOS, SODIMM-200 Samsung Semiconductor MT18VDDF6472HG-265 vs M485L6523BU0-CB0

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