MT18LSDT6472AG-10E
Micron Technology Inc
Description: Synchronous DRAM Module, 64MX72, 6ns, CMOS, PDMA168,

Overview of MT18LSDT6472AG-10E by Micron Technology Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Computing and Data Storage

Available Datasheets

Part # Manufacturer Description Datasheet
AD22103KRZ-R7 Analog Devices 114-10E-013V TEMP SENSOR

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Part Data Attributes for MT18LSDT6472AG-10E by Micron Technology Inc

MT18LSDT6472AG-10E
Micron Technology Inc
-
-
Rohs Code
No
Part Life Cycle Code
Contact Manufacturer
Ihs Manufacturer
MICRON TECHNOLOGY INC
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.36
Access Time-Max
6 ns
Clock Frequency-Max (fCLK)
125 MHz
I/O Type
COMMON
JESD-30 Code
R-PDMA-N168
Memory Density
4831838208 bit
Memory IC Type
SYNCHRONOUS DRAM MODULE
Memory Width
72
Number of Terminals
168
Number of Words
67108864 words
Number of Words Code
64000000
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
64MX72
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
DIMM
Package Equivalence Code
DIMM168
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
Qualification Status
Not Qualified
Refresh Cycles
8192
Standby Current-Max
0.036 A
Supply Current-Max
4.86 mA
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
NO
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
NO LEAD
Terminal Pitch
1.27 mm
Terminal Position
DUAL
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  1. MT18LSDT6472AG-10E
    Micron Technology Inc
    Synchronous DRAM Module, 64MX72, 6ns, CMOS, PDMA168,
    VS

Alternate Parts for MT18LSDT6472AG-10E

This table gives cross-reference parts and alternative options found for MT18LSDT6472AG-10E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT18LSDT6472AG-10E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MT18LSDT6472LAG-10E Synchronous DRAM Module, 64MX72, 6ns, CMOS, PDMA168 Micron Technology Inc MT18LSDT6472AG-10E vs MT18LSDT6472LAG-10E
KMM374S6453AT-G8 Synchronous DRAM Module, 64MX72, 6ns, CMOS Samsung Semiconductor MT18LSDT6472AG-10E vs KMM374S6453AT-G8
HYM72V64756T8-8 Synchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168 SK Hynix Inc MT18LSDT6472AG-10E vs HYM72V64756T8-8
Part Number Description Manufacturer Compare
KMM377S6450AT2-GL Synchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168 Samsung Semiconductor MT18LSDT6472AG-10E vs KMM377S6450AT2-GL
WED3DG7266V7D1I-SG Synchronous DRAM Module, 64MX72, CMOS, ROHS COMPLIANT, SO-DIMM, 144 PIN Microsemi Corporation MT18LSDT6472AG-10E vs WED3DG7266V7D1I-SG
M347S6453DTS-C1H Synchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168 Samsung Semiconductor MT18LSDT6472AG-10E vs M347S6453DTS-C1H
HYM72V64756AT8-P Synchronous DRAM Module, 64MX72, CMOS, DIMM-168 SK Hynix Inc MT18LSDT6472AG-10E vs HYM72V64756AT8-P
KMM377S6450AT3-GH Synchronous DRAM Module, 64MX72, 6ns, CMOS Samsung Semiconductor MT18LSDT6472AG-10E vs KMM377S6450AT3-GH
WED3DG7266V7D1 Synchronous DRAM Module, 64MX72, CMOS, SODIMM-144 Microsemi Corporation MT18LSDT6472AG-10E vs WED3DG7266V7D1
HYM72V756431LTH-10S Synchronous DRAM Module, 64MX72, 6ns, CMOS, DIMM-168 SK Hynix Inc MT18LSDT6472AG-10E vs HYM72V756431LTH-10S
HYS72V64300GR-7-D Synchronous DRAM Module, 64MX72, 5.4ns, CMOS, DIMM-168 Infineon Technologies AG MT18LSDT6472AG-10E vs HYS72V64300GR-7-D
MC-4564DC726EF-A10 Synchronous DRAM Module, 64MX72, 6ns, MOS, DIMM-168 NEC Electronics Group MT18LSDT6472AG-10E vs MC-4564DC726EF-A10
HYM72V64736T8-HP Synchronous DRAM Module, 64MX72, 5.4ns, CMOS, DIMM-168 SK Hynix Inc MT18LSDT6472AG-10E vs HYM72V64736T8-HP

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