Part Details for MT16VDDT6464AG-262XX by Micron Technology Inc
Overview of MT16VDDT6464AG-262XX by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Computing and Data Storage
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| HD6432262XXXFA | Renesas Electronics Corporation | Microcontrollers for Mobile Device Applications (Non Promotion) | |
| HD6432262XXXFAW | Renesas Electronics Corporation | Microcontrollers for Mobile Device Applications (Non Promotion) | |
| HD6432262XXXTFW | Renesas Electronics Corporation | Microcontrollers for Mobile Device Applications (Non Promotion) |
Part Details for MT16VDDT6464AG-262XX
MT16VDDT6464AG-262XX CAD Models
MT16VDDT6464AG-262XX Part Data Attributes
|
|
MT16VDDT6464AG-262XX
Micron Technology Inc
Buy Now
Datasheet
|
Compare Parts:
MT16VDDT6464AG-262XX
Micron Technology Inc
DDR DRAM Module, 64MX64, 0.75ns, CMOS, DIMM-184
|
| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | DIMM | |
| Package Description | DIMM-184 | |
| Pin Count | 184 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 0.75 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-XDMA-N184 | |
| Memory Density | 4294967296 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 184 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 64MX64 | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Peak Reflow Temperature (Cel) | 235 | |
| Qualification Status | Not Qualified | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
Alternate Parts for MT16VDDT6464AG-262XX
This table gives cross-reference parts and alternative options found for MT16VDDT6464AG-262XX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT16VDDT6464AG-262XX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NT512D64S8HAAG-8B | DDR DRAM Module, 64MX64, 0.8ns, CMOS, DIMM-184 | Nanya Technology Corporation | MT16VDDT6464AG-262XX vs NT512D64S8HAAG-8B |
| HYMD264646C8J-J | DDR DRAM Module, 64MX64, 0.7ns, CMOS, 5.250 X 1.250 X 0.150 INCH, DIMM-184 | SK Hynix Inc | MT16VDDT6464AG-262XX vs HYMD264646C8J-J |
| NT512D64S88B0G-5T | DDR DRAM Module, 64MX64, 0.7ns, CMOS, DIMM-184 | Nanya Technology Corporation | MT16VDDT6464AG-262XX vs NT512D64S88B0G-5T |
| V826664K24SCIL-C0 | DDR DRAM Module, 64MX64, 0.75ns, CMOS, DIMM-184 | ProMOS Technologies Inc | MT16VDDT6464AG-262XX vs V826664K24SCIL-C0 |
| M368L6523BUN-LA2 | DDR DRAM Module, 64MX64, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 | Samsung Semiconductor | MT16VDDT6464AG-262XX vs M368L6523BUN-LA2 |
| M368L6423FTN-LAA | DDR DRAM Module, 64MX64, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | MT16VDDT6464AG-262XX vs M368L6423FTN-LAA |
| M368L6423FUN-LB3 | DDR DRAM Module, 64MX64, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184 | Samsung Semiconductor | MT16VDDT6464AG-262XX vs M368L6423FUN-LB3 |
| EBD52UC8AJFA-6B | DDR DRAM Module, 64MX64, 0.7ns, CMOS, DIMM-184 | Elpida Memory Inc | MT16VDDT6464AG-262XX vs EBD52UC8AJFA-6B |
| V826664K24SAIL-D3 | DDR DRAM Module, 64MX64, 0.65ns, CMOS, DIMM-184 | ProMOS Technologies Inc | MT16VDDT6464AG-262XX vs V826664K24SAIL-D3 |
| M368L6423ETM-LC4 | DDR DRAM Module, 64MX64, 0.65ns, CMOS, DIMM-184 | Samsung Semiconductor | MT16VDDT6464AG-262XX vs M368L6423ETM-LC4 |