Part Details for MT16VDDT12864AY-335F2 by Micron Technology Inc
Overview of MT16VDDT12864AY-335F2 by Micron Technology Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for MT16VDDT12864AY-335F2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
V36:1790_07539850
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Arrow Electronics | DRAM Module DDR SDRAM 1Gbyte 184UDIMM Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 0812 | Americas - 17 |
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$18.5900 / $76.3534 | Buy Now |
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DISTI #
51476473
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Verical | DRAM Module DDR SDRAM 1Gbyte 184UDIMM Min Qty: 1 Package Multiple: 1 Date Code: 0812 | Americas - 17 |
|
$18.5900 | Buy Now |
Part Details for MT16VDDT12864AY-335F2
MT16VDDT12864AY-335F2 CAD Models
MT16VDDT12864AY-335F2 Part Data Attributes
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MT16VDDT12864AY-335F2
Micron Technology Inc
Buy Now
Datasheet
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MT16VDDT12864AY-335F2
Micron Technology Inc
DDR DRAM Module, 128MX64, 0.7ns, CMOS, PDMA184
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Package Description | DIMM, DIMM184 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Samacsys Manufacturer | Micron | |
| Access Time-Max | 0.7 ns | |
| Clock Frequency-Max (fCLK) | 167 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PDMA-N184 | |
| Memory Density | 8589934592 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 64 | |
| Number of Terminals | 184 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 128MX64 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM184 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Standby Current-Max | 0.08 A | |
| Supply Current-Max | 4.64 mA | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | DUAL |
Alternate Parts for MT16VDDT12864AY-335F2
This table gives cross-reference parts and alternative options found for MT16VDDT12864AY-335F2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT16VDDT12864AY-335F2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HYMD512646AL8-H | DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184 | SK Hynix Inc | MT16VDDT12864AY-335F2 vs HYMD512646AL8-H |
| M368L2923CUN-CA2 | DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | MT16VDDT12864AY-335F2 vs M368L2923CUN-CA2 |
| M368L2923BTM-CC4 | DDR DRAM Module, 128MX64, 0.65ns, CMOS, DIMM-184 | Samsung Semiconductor | MT16VDDT12864AY-335F2 vs M368L2923BTM-CC4 |
| MT16VDDT12864AG-262XX | DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184 | Micron Technology Inc | MT16VDDT12864AY-335F2 vs MT16VDDT12864AG-262XX |
| EBD11UD8ADFB-7B-E | DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184 | Elpida Memory Inc | MT16VDDT12864AY-335F2 vs EBD11UD8ADFB-7B-E |
| VR4CU286428ETP | DDR DRAM Module, 128MX64, 0.65ns, CMOS, ROHS COMPLIANT, DIMM-184 | Viking Technology | MT16VDDT12864AY-335F2 vs VR4CU286428ETP |
| HYMD512646BP8J-D43 | DDR DRAM Module, 128MX64, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184 | SK Hynix Inc | MT16VDDT12864AY-335F2 vs HYMD512646BP8J-D43 |
| W3EG64129S202D3 | DDR DRAM Module, 128MX64, CMOS, DIMM-184 | Microsemi Corporation | MT16VDDT12864AY-335F2 vs W3EG64129S202D3 |
| W3EG64128S335D3M | DDR DRAM Module, 128MX64, 0.7ns, CMOS, DIMM-184 | Microsemi Corporation | MT16VDDT12864AY-335F2 vs W3EG64128S335D3M |
| W3EG64128S262D3MG | DDR DRAM Module, 128MX64, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 | Microsemi Corporation | MT16VDDT12864AY-335F2 vs W3EG64128S262D3MG |