Part Details for MT16VDDF12864HY-40BXX by Micron Technology Inc
Overview of MT16VDDF12864HY-40BXX by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Computing and Data Storage
Part Details for MT16VDDF12864HY-40BXX
MT16VDDF12864HY-40BXX CAD Models
MT16VDDF12864HY-40BXX Part Data Attributes
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MT16VDDF12864HY-40BXX
Micron Technology Inc
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Datasheet
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MT16VDDF12864HY-40BXX
Micron Technology Inc
DDR DRAM Module, 128MX64, 0.7ns, CMOS, LEAD FREE, SODIMM-200
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | SODIMM | |
| Package Description | DIMM, | |
| Pin Count | 200 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-XZMA-N200 | |
| JESD-609 Code | e4 | |
| Memory Density | 8589934592 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 200 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 128MX64 | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.5 V | |
| Supply Voltage-Nom (Vsup) | 2.6 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | GOLD | |
| Terminal Form | NO LEAD | |
| Terminal Position | ZIG-ZAG |
Alternate Parts for MT16VDDF12864HY-40BXX
This table gives cross-reference parts and alternative options found for MT16VDDF12864HY-40BXX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT16VDDF12864HY-40BXX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| M470T2864EH3-LE7 | DDR DRAM Module, 64MX16, 0.4ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | MT16VDDF12864HY-40BXX vs M470T2864EH3-LE7 |
| M470L2923BV0-LB0 | DDR DRAM Module, 128MX64, 0.75ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | MT16VDDF12864HY-40BXX vs M470L2923BV0-LB0 |
| W3EG64128S265BD4 | DDR DRAM Module, 128MX64, CMOS, SODIMM-200 | Microsemi Corporation | MT16VDDF12864HY-40BXX vs W3EG64128S265BD4 |
| W3EG264M64EFSU403D4-SG | 128MX64 DDR DRAM MODULE, 0.65ns, DMA200, ROHS COMPLIANT, SO-DIMM-200 | Microsemi Corporation | MT16VDDF12864HY-40BXX vs W3EG264M64EFSU403D4-SG |
| HYS64T128021HDL-3.7-B | DDR DRAM Module, 128MX64, 0.5ns, CMOS, GREEN, SODIMM-200 | Infineon Technologies AG | MT16VDDF12864HY-40BXX vs HYS64T128021HDL-3.7-B |
| MT16VDDF12864HY-265XX | DDR DRAM Module, 128MX64, 0.75ns, CMOS, LEAD FREE, SODIMM-200 | Micron Technology Inc | MT16VDDF12864HY-40BXX vs MT16VDDF12864HY-265XX |
| M2N1G64TU8HA2B-5A | DDR DRAM Module, 128MX64, 0.6ns, CMOS, GREEN, SODIMM-200 | Nanya Technology Corporation | MT16VDDF12864HY-40BXX vs M2N1G64TU8HA2B-5A |
| HYMD512M646BLF8-J | DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200 | SK Hynix Inc | MT16VDDF12864HY-40BXX vs HYMD512M646BLF8-J |
| MT16VDDF12864HG-265XX | DDR DRAM Module, 128MX64, 0.75ns, CMOS, SODIMM-200 | Micron Technology Inc | MT16VDDF12864HY-40BXX vs MT16VDDF12864HG-265XX |
| HYMP112S64M8-E3 | DDR DRAM Module, 128MX64, 0.6ns, CMOS, DIMM-200 | SK Hynix Inc | MT16VDDF12864HY-40BXX vs HYMP112S64M8-E3 |