Memory
MT16VDDF12864HY-40BXX
Micron Technology Inc
Description: DDR DRAM Module, 128MX64, 0.7ns, CMOS, LEAD FREE, SODIMM-200

Overview of MT16VDDF12864HY-40BXX by Micron Technology Inc

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Where used in Applications: Consumer Electronics Computing and Data Storage

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Part Data Attributes for MT16VDDF12864HY-40BXX by Micron Technology Inc

MT16VDDF12864HY-40BXX
Micron Technology Inc
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MICRON TECHNOLOGY INC
Part Package Code
SODIMM
Package Description
DIMM,
Pin Count
200
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.36
Access Mode
DUAL BANK PAGE BURST
Access Time-Max
0.7 ns
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-XZMA-N200
JESD-609 Code
e4
Memory Density
8589934592 bit
Memory IC Type
DDR DRAM MODULE
Memory Width
64
Number of Functions
1
Number of Ports
1
Number of Terminals
200
Number of Words
134217728 words
Number of Words Code
128000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
128MX64
Package Body Material
UNSPECIFIED
Package Code
DIMM
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
Qualification Status
Not Qualified
Self Refresh
YES
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.5 V
Supply Voltage-Nom (Vsup)
2.6 V
Surface Mount
NO
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
GOLD
Terminal Form
NO LEAD
Terminal Position
ZIG-ZAG
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  1. MT16VDDF12864HY-40BXX
    Micron Technology Inc
    DDR DRAM Module, 128MX64, 0.7ns, CMOS, LEAD FREE, SODIMM-200
    VS

Alternate Parts for MT16VDDF12864HY-40BXX

This table gives cross-reference parts and alternative options found for MT16VDDF12864HY-40BXX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT16VDDF12864HY-40BXX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MT16VDDF12864HG-40BXX DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200 Micron Technology Inc MT16VDDF12864HY-40BXX vs MT16VDDF12864HG-40BXX
Part Number Description Manufacturer Compare
WV3HG264M64EEU403D4SG DDR DRAM Module, 128MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 Microsemi Corporation MT16VDDF12864HY-40BXX vs WV3HG264M64EEU403D4SG
M470T2864DZ3-LCC Synchronous DRAM Module, 128MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 Samsung Semiconductor MT16VDDF12864HY-40BXX vs M470T2864DZ3-LCC
HYMP112S64AP6-E3 DDR DRAM Module, 128MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 SK Hynix Inc MT16VDDF12864HY-40BXX vs HYMP112S64AP6-E3
M470T2953EZ3-LCC DDR DRAM Module, 128MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 Samsung Semiconductor MT16VDDF12864HY-40BXX vs M470T2953EZ3-LCC
M470L2923BN0-CB0 DDR DRAM Module, 128MX64, 0.75ns, CMOS, SODIMM-200 Samsung Semiconductor MT16VDDF12864HY-40BXX vs M470L2923BN0-CB0
HYS64D128021EBDL-5-B DDR DRAM Module, 128MX64, 0.5ns, CMOS, PDMA200, ROHS COMPLIANT, SODIMM-200 Qimonda AG MT16VDDF12864HY-40BXX vs HYS64D128021EBDL-5-B
WV3EG265M64EFSU265D4-S DDR DRAM Module, 128MX64, 0.75ns, CMOS, SODIMM-200 Microsemi Corporation MT16VDDF12864HY-40BXX vs WV3EG265M64EFSU265D4-S
W3HG128M64EEU403D4SG DDR DRAM Module, 128MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 Microsemi Corporation MT16VDDF12864HY-40BXX vs W3HG128M64EEU403D4SG
M2N1G64TU8HA2B-5A DDR DRAM Module, 128MX64, 0.6ns, CMOS, GREEN, SODIMM-200 Nanya Technology Corporation MT16VDDF12864HY-40BXX vs M2N1G64TU8HA2B-5A
EBD11UD8ABDA-7A DDR DRAM Module, 128MX64, 0.75ns, CMOS, SODIMM-200 Elpida Memory Inc MT16VDDF12864HY-40BXX vs EBD11UD8ABDA-7A

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