Datasheets
MT16LSDT6464AY-133XX by: Micron Technology Inc

Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, LEAD FREE, MO-161, DIMM-168

Part Details for MT16LSDT6464AY-133XX by Micron Technology Inc

Overview of MT16LSDT6464AY-133XX by Micron Technology Inc

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Applications Consumer Electronics Computing and Data Storage

Part Details for MT16LSDT6464AY-133XX

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MT16LSDT6464AY-133XX Part Data Attributes

MT16LSDT6464AY-133XX Micron Technology Inc
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MT16LSDT6464AY-133XX Micron Technology Inc Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, LEAD FREE, MO-161, DIMM-168
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code DIMM
Package Description DIMM,
Pin Count 168
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Mode DUAL BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-XDMA-N168
JESD-609 Code e4
Memory Density 4294967296 bit
Memory IC Type SYNCHRONOUS DRAM MODULE
Memory Width 64
Number of Functions 1
Number of Ports 1
Number of Terminals 168
Number of Words 67108864 words
Number of Words Code 64000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 65 °C
Operating Temperature-Min
Organization 64MX64
Package Body Material UNSPECIFIED
Package Code DIMM
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Self Refresh YES
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish GOLD
Terminal Form NO LEAD
Terminal Position DUAL

Alternate Parts for MT16LSDT6464AY-133XX

This table gives cross-reference parts and alternative options found for MT16LSDT6464AY-133XX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT16LSDT6464AY-133XX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT16LSDT6464AY-133B1 Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 Micron Technology Inc MT16LSDT6464AY-133XX vs MT16LSDT6464AY-133B1
MT16LSDT6464AIY-133XX Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, LEAD FREE, MO-161, DIMM-168 Micron Technology Inc MT16LSDT6464AY-133XX vs MT16LSDT6464AIY-133XX
MT16LSDT6464AI-133XX Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 Micron Technology Inc MT16LSDT6464AY-133XX vs MT16LSDT6464AI-133XX
MT16LSDT6464AG-133B1 Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 Micron Technology Inc MT16LSDT6464AY-133XX vs MT16LSDT6464AG-133B1
MT16LSDT6464AIG-133XX Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, MO-161, DIMM-168 Micron Technology Inc MT16LSDT6464AY-133XX vs MT16LSDT6464AIG-133XX
Part Number Description Manufacturer Compare
W3DG6463V10D2-SG Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 Microsemi Corporation MT16LSDT6464AY-133XX vs W3DG6463V10D2-SG
HYS64V64220GU-7.5-D Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 Infineon Technologies AG MT16LSDT6464AY-133XX vs HYS64V64220GU-7.5-D
HB52E648EN-B6B Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 Elpida Memory Inc MT16LSDT6464AY-133XX vs HB52E648EN-B6B
HYM72V64636BLT8-K Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 SK Hynix Inc MT16LSDT6464AY-133XX vs HYM72V64636BLT8-K
WED3DG6466V75D2 Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 Microsemi Corporation MT16LSDT6464AY-133XX vs WED3DG6466V75D2
M366S6453AT0-C80 Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 Samsung Semiconductor MT16LSDT6464AY-133XX vs M366S6453AT0-C80
M366S6453CTS-L1L Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 Samsung Semiconductor MT16LSDT6464AY-133XX vs M366S6453CTS-L1L
M366S6453CTS-L7A Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 Samsung Semiconductor MT16LSDT6464AY-133XX vs M366S6453CTS-L7A
NT512S64V8HA0G-8B Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 Nanya Technology Corporation MT16LSDT6464AY-133XX vs NT512S64V8HA0G-8B
WED3DG6366V7D2 Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 Microsemi Corporation MT16LSDT6464AY-133XX vs WED3DG6366V7D2

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