Part Details for MT16LSDT6464AG-10EXX by Micron Technology Inc
Overview of MT16LSDT6464AG-10EXX by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Computing and Data Storage
Part Details for MT16LSDT6464AG-10EXX
MT16LSDT6464AG-10EXX CAD Models
MT16LSDT6464AG-10EXX Part Data Attributes
|
|
MT16LSDT6464AG-10EXX
Micron Technology Inc
Buy Now
Datasheet
|
Compare Parts:
MT16LSDT6464AG-10EXX
Micron Technology Inc
Synchronous DRAM Module, 64MX64, 6ns, CMOS, MO-161, DIMM-168
|
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | DIMM | |
| Package Description | DIMM, | |
| Pin Count | 168 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-XDMA-N168 | |
| Memory Density | 4294967296 bit | |
| Memory IC Type | SYNCHRONOUS DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 168 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 65 °C | |
| Operating Temperature-Min | ||
| Organization | 64MX64 | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Peak Reflow Temperature (Cel) | 235 | |
| Qualification Status | Not Qualified | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
Alternate Parts for MT16LSDT6464AG-10EXX
This table gives cross-reference parts and alternative options found for MT16LSDT6464AG-10EXX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT16LSDT6464AG-10EXX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| V436664S24VXTG-75PC | Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 | Mosel Vitelic Corporation | MT16LSDT6464AG-10EXX vs V436664S24VXTG-75PC |
| THMY51N01B80 | IC 64M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168, DIMM-168, Dynamic RAM | Toshiba America Electronic Components | MT16LSDT6464AG-10EXX vs THMY51N01B80 |
| W3DG6463V10D2-G | Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 | Microsemi Corporation | MT16LSDT6464AG-10EXX vs W3DG6463V10D2-G |
| MT16LSDT6464AY-10EXX | Synchronous DRAM Module, 64MX64, 6ns, CMOS, LEAD FREE, MO-161, DIMM-168 | Micron Technology Inc | MT16LSDT6464AG-10EXX vs MT16LSDT6464AY-10EXX |
| HYM72V64636HLT8-H | Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 | SK Hynix Inc | MT16LSDT6464AG-10EXX vs HYM72V64636HLT8-H |
| HYM72V64656BLT8-P | Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 | SK Hynix Inc | MT16LSDT6464AG-10EXX vs HYM72V64656BLT8-P |
| IBM13N64644HCA-260T | Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 | IBM | MT16LSDT6464AG-10EXX vs IBM13N64644HCA-260T |
| HYM72V64636HT8-H | Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 | SK Hynix Inc | MT16LSDT6464AG-10EXX vs HYM72V64636HT8-H |
| HYM72V64656BT8-S | Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 | SK Hynix Inc | MT16LSDT6464AG-10EXX vs HYM72V64656BT8-S |
| M366S6453BT0-C7A | Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 | Samsung Semiconductor | MT16LSDT6464AG-10EXX vs M366S6453BT0-C7A |