Part Details for MT16LSDT3264AG-10BXX by Micron Technology Inc
Overview of MT16LSDT3264AG-10BXX by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MT16LSDT3264AG-10BXX
MT16LSDT3264AG-10BXX CAD Models
MT16LSDT3264AG-10BXX Part Data Attributes
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MT16LSDT3264AG-10BXX
Micron Technology Inc
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Datasheet
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MT16LSDT3264AG-10BXX
Micron Technology Inc
Synchronous DRAM Module, 32MX64, 6ns, CMOS,
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICRON TECHNOLOGY INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Date Of Intro | 1999-04-25 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 6 ns | |
Additional Feature | AUTO/SELF REFRESH | |
JESD-30 Code | R-XDMA-N168 | |
JESD-609 Code | e0 | |
Memory Density | 2147483648 bit | |
Memory IC Type | SYNCHRONOUS DRAM MODULE | |
Memory Width | 64 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 168 | |
Number of Words | 33554432 words | |
Number of Words Code | 32000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 32MX64 | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Qualification Status | Not Qualified | |
Self Refresh | YES | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL |
Alternate Parts for MT16LSDT3264AG-10BXX
This table gives cross-reference parts and alternative options found for MT16LSDT3264AG-10BXX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT16LSDT3264AG-10BXX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MT16LSDT3264AG-10CB1 | Synchronous DRAM Module, 32MX64, CMOS, DIMM-168 | Micron Technology Inc | MT16LSDT3264AG-10BXX vs MT16LSDT3264AG-10CB1 |
SM25608ALDT-7.5 | Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, DIMM-168 | Ramtron International Corporation | MT16LSDT3264AG-10BXX vs SM25608ALDT-7.5 |
HYM71V32635HCLT8N-K | Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, DIMM-168 | SK Hynix Inc | MT16LSDT3264AG-10BXX vs HYM71V32635HCLT8N-K |
M366S3253CTU-L7A | Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, DIMM-168 | Samsung Semiconductor | MT16LSDT3264AG-10BXX vs M366S3253CTU-L7A |
M366S3253ETU-C7A | Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, DIMM-168 | Samsung Semiconductor | MT16LSDT3264AG-10BXX vs M366S3253ETU-C7A |
MC-4532CD646EF-A80 | Synchronous DRAM Module, 32MX64, 6ns, MOS, DIMM-168 | NEC Electronics Group | MT16LSDT3264AG-10BXX vs MC-4532CD646EF-A80 |
THMY25N01A75 | IC 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168, DIMM-168, Dynamic RAM | Toshiba America Electronic Components | MT16LSDT3264AG-10BXX vs THMY25N01A75 |
HYM72V32656HT8-P | Synchronous DRAM Module, 32MX64, 6ns, CMOS, DIMM-168 | SK Hynix Inc | MT16LSDT3264AG-10BXX vs HYM72V32656HT8-P |
M366S3253DTS-C7C | Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, DIMM-168 | Samsung Semiconductor | MT16LSDT3264AG-10BXX vs M366S3253DTS-C7C |
HYM72V32636T8-H | Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, DIMM-168 | SK Hynix Inc | MT16LSDT3264AG-10BXX vs HYM72V32636T8-H |