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Power Field-Effect Transistor, 35A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-268AA
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78AH6587
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Newark | Mosfet, Sic, N-Ch, 1.2Kv, 35A, To-268, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:35A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:3Pins, Rds(On) Test Voltage:20V, Power Dissipation:182W Rohs Compliant: Yes |Microchip MSC080SMA120S Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 40 |
|
$10.6900 / $14.2800 | Buy Now |
DISTI #
MSC080SMA120S-ND
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DigiKey | SICFET N-CH 1200V 35A D3PAK Min Qty: 1 Lead time: 8 Weeks Container: Tube |
34 In Stock |
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$10.2750 / $13.7300 | Buy Now |
DISTI #
MSC080SMA120S
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Avnet Americas | Transistor MOSFET N-CH 1200V 35A 3-Pin D3PAK Tube - Rail/Tube (Alt: MSC080SMA120S) RoHS: Not Compliant Min Qty: 90 Package Multiple: 30 Lead time: 8 Weeks, 0 Days Container: Tube | 0 |
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$10.2800 / $13.7300 | Buy Now |
DISTI #
78AH6587
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Avnet Americas | Transistor MOSFET N-CH 1200V 35A 3-Pin D3PAK Tube - Bulk (Alt: 78AH6587) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks, 1 Days Container: Bulk | 40 Partner Stock |
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$10.6900 / $13.9400 | Buy Now |
DISTI #
494-MSC080SMA120S
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Mouser Electronics | MOSFET MOSFET SIC 1200 V 80 mOhm TO-268 RoHS: Compliant | 93 |
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$11.0100 / $13.7300 | Buy Now |
DISTI #
MSC080SMA120S
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Microchip Technology Inc | MOSFET SIC 1200 V 80 mOhm TO-268, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes |
0 Alternates Available |
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$10.2800 / $13.7300 | Buy Now |
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Future Electronics | . RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Container: Tube | 20Tube |
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$9.1400 / $9.5900 | Buy Now |
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Future Electronics | . RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 30 Lead time: 8 Weeks Container: Tube | 0Tube |
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$10.7300 / $11.2600 | Buy Now |
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Onlinecomponents.com | Trans MOSFET SiC 1.2KV 35A Automotive 3-Pin(2+Tab) D3PAK Tube RoHS: Compliant | 770 Factory Stock |
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$11.1900 / $16.0800 | Buy Now |
DISTI #
58906976
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Verical | Trans MOSFET SiC 1.2KV 35A 3-Pin(2+Tab) D3PAK Tube Automotive AEC-Q101 Min Qty: 30 Package Multiple: 30 | Americas - 60 |
|
$18.1805 | Buy Now |
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MSC080SMA120S
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
MSC080SMA120S
Microchip Technology Inc
Power Field-Effect Transistor, 35A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-268AA
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Package Description | TO-268, D3PAK-3/2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 14 Weeks, 1 Day | |
Samacsys Manufacturer | Microchip | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 35 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 9 pF | |
JEDEC-95 Code | TO-268AA | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 182 W | |
Pulsed Drain Current-Max (IDM) | 87 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |
This table gives cross-reference parts and alternative options found for MSC080SMA120S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MSC080SMA120S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NVHL080N120SC1 | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3, 450-TUBE, Automotive Qualified | onsemi | MSC080SMA120S vs NVHL080N120SC1 |
S2301 | Power Field-Effect Transistor, 40A I(D), 1200V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, DIE | ROHM Semiconductor | MSC080SMA120S vs S2301 |
NTHL080N120SC1 | Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE | onsemi | MSC080SMA120S vs NTHL080N120SC1 |
SCT2080KE | Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | ROHM Semiconductor | MSC080SMA120S vs SCT2080KE |
SCT2080KEC11 | Power Field-Effect Transistor, | ROHM Semiconductor | MSC080SMA120S vs SCT2080KEC11 |
SCT3080KLHRC11 | Power Field-Effect Transistor, | ROHM Semiconductor | MSC080SMA120S vs SCT3080KLHRC11 |
SCT2080KEHRC11 | Power Field-Effect Transistor, | ROHM Semiconductor | MSC080SMA120S vs SCT2080KEHRC11 |
SCH2080KE | Power Field-Effect Transistor, 35A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | ROHM Semiconductor | MSC080SMA120S vs SCH2080KE |
NVHL080N120SC1A | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80mohm, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L, 450-TUBE, Automotive Qualified | onsemi | MSC080SMA120S vs NVHL080N120SC1A |