MRFG35005MT1
Description: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, PLASTIC, CASE 466-02, PLD-1.5, 4 PIN

Overview of MRFG35005MT1 by Motorola Semiconductor Products

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  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

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Part Data Attributes for MRFG35005MT1 by Motorola Semiconductor Products

MRFG35005MT1
Motorola Semiconductor Products
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
MOTOROLA INC
Package Description
PLASTIC, CASE 466-02, PLD-1.5, 4 PIN
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.75
Configuration
SINGLE
DS Breakdown Voltage-Min
15 V
FET Technology
HIGH ELECTRON MOBILITY
Highest Frequency Band
S BAND
JESD-30 Code
R-PQSO-N4
Number of Elements
1
Number of Terminals
4
Operating Mode
DEPLETION MODE
Operating Temperature-Max
85 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
10.5 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
NO LEAD
Terminal Position
QUAD
Transistor Application
AMPLIFIER
Transistor Element Material
GALLIUM ARSENIDE
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  1. MRFG35005MT1
    Motorola Semiconductor Products
    RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, PLASTIC, CASE 466-02, PLD-1.5, 4 PIN
    VS

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