| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
28W3507
|
Newark | Ldmos, Rf, 25W, To-270, Drain Source Voltage Vds:133Vdc, Continuous Drain Current Id:-, Power Dissipation:25W, Operating Frequency Min:1.8Mhz, Operating Frequency Max:2Ghz, No. Of Pins:2Pins, Operating Temperature Max:150°C Rohs Compliant: Yes |Nxp MRFE6VS25NR1 RoHS: Compliant Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$34.9900 | Buy Now | |
|
DISTI #
05W8101
|
Newark | Ldmos, Rf, 25W, To-270, Full Reel, Drain Source Voltage Vds:133Vdc, Continuous Drain Current Id:-, Power Dissipation:25W, Operating Frequency Min:1.8Mhz, Operating Frequency Max:2Ghz, No. Of Pins:2Pins, Channel Type:N Channel Rohs Compliant: Yes |Nxp MRFE6VS25NR1 RoHS: Compliant Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$21.8000 | Buy Now | |
|
DISTI #
31AC6678
|
Newark | Transistor, Rf, 133V, To-270-2, Drain Source Voltage Vds:133Vdc, Continuous Drain Current Id:-, Power Dissipation Pd:-, Operating Frequency Min:1.8Mhz, Operating Frequency Max:2000Mhz, Rf Transistor Case:To-270, No. Of Pins:2Pins, Rohs Compliant: Yes |Nxp MRFE6VS25NR1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$27.3600 / $36.4100 | Buy Now | |
|
DISTI #
MRFE6VS25NR1
|
Avnet Americas | Transistor RF FET N-CH 133V 1.8MHz to 2000MHz 2-Pin TO-270 T/R - Tape and Reel (Alt: MRFE6VS25NR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$22.7094 / $26.1890 | Buy Now | |
| Future Electronics | MRFE6VS Series 133 V 512 MHz RF Power LDMOS Transistor - TO-270-2 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 10 Weeks Container: Reel | 0Reel |
|
$25.0300 | Buy Now | ||
| Future Electronics | MRFE6VS Series 133 V 512 MHz RF Power LDMOS Transistor - TO-270-2 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 10 Weeks Container: Reel | 0Reel |
|
$25.0300 | Buy Now | ||
|
DISTI #
MRFE6VS25NR1
|
Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 | 994 |
|
$26.6800 / $29.6500 | Buy Now | |
|
DISTI #
MRFE6VS25NR1
|
Avnet Silica | Transistor RF FET N-CH 133V 1.8MHz to 2000MHz 2-Pin TO-270 T/R (Alt: MRFE6VS25NR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 12 Weeks, 0 Days | Silica - 0 |
|
Buy Now | ||
|
DISTI #
C1S603900547958
|
Chip1Stop | Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V RoHS: Compliant | 453 |
|
$33.8000 / $43.4000 | Buy Now | |
|
DISTI #
MRFE6VS25NR1
|
EBV Elektronik | Transistor RF FET N-CH 133V 1.8MHz to 2000MHz 2-Pin TO-270 T/R (Alt: MRFE6VS25NR1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 12 Weeks, 0 Days | EBV - 500 |
|
Buy Now |
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Not Recommended
|
|
Ihs Manufacturer
|
NXP SEMICONDUCTORS
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8541.29.00
|
|
Factory Lead Time
|
10 Weeks
|
|
Samacsys Manufacturer
|
NXP
|
|
Configuration
|
SINGLE
|
|
DS Breakdown Voltage-Min
|
133 V
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
Highest Frequency Band
|
ULTRA HIGH FREQUENCY BAND
|
|
JESD-30 Code
|
R-PDFM-F2
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
3
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
2
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Operating Temperature-Min
|
-40 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation Ambient-Max
|
25 W
|
|
Power Gain-Min (Gp)
|
24.5 dB
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
Tin (Sn)
|
|
Terminal Form
|
FLAT
|
|
Terminal Position
|
DUAL
|
|
Time@Peak Reflow Temperature-Max (s)
|
40
|
