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VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
43K5594
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Newark | Rf Power Fet, N Channel, 40V, 466-03, Full Reel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:4A, Power Dissipation:62.5W, Operating Frequency Min:135Mhz, Operating Frequency Max:175Mhz, No. Of Pins:3Pins Rohs Compliant: Yes |Nxp MRF1511NT1 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
DISTI #
16N1972
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Newark | Rf Power Fet, N Channel, 40V, Pld-1.5, Drain Source Voltage Vds:40V, Continuous Drain Current Id:4A, Power Dissipation:62.5W, Operating Frequency Min:135Mhz, Operating Frequency Max:175Mhz, No. Of Pins:3Pins, Channel Type:N Channel Rohs Compliant: Yes |Nxp MRF1511NT1 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
DISTI #
MRF1511NT1
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Avnet Americas | Transistor RF FET N-CH 40V 4A 66MHz to 175MHz 3-Pin PLD-1.5 T/R - Tape and Reel (Alt: MRF1511NT1) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 3 Partner Stock |
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RFQ |
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MRF1511NT1
NXP Semiconductors
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MRF1511NT1
NXP Semiconductors
VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Package Description | ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | NXP | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 4 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
JESD-30 Code | R-PQSO-N4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 3 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 62.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | NO LEAD | |
Terminal Position | QUAD | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for MRF1511NT1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF1511NT1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MRF1511T1 | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, POWER, PLASTIC, CASE 466-02, 4 PIN | MACOM | MRF1511NT1 vs MRF1511T1 |
MRF1511T1 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN | Freescale Semiconductor | MRF1511NT1 vs MRF1511T1 |