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RF Power Field-Effect Transistor
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MRF101AN by NXP Semiconductors is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85AC2014
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Newark | Rf Fet Transistor, 133V, 182W, To-220, Drain Source Voltage Vds:133V, Continuous Drain Current Id:... more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 441 |
|
$18.0500 / $26.3300 | Buy Now |
DISTI #
568-14751-ND
|
DigiKey | RF MOSFET LDMOS 50V TO220-3 Min Qty: 1 Lead time: 10 Weeks Container: Tube |
112 In Stock |
|
$18.6809 / $28.1000 | Buy Now |
DISTI #
MRF101AN
|
Avnet Americas | Transistor RF FET N-CH 133V 3-Pin TO-220 Tube - Rail/Tube (Alt: MRF101AN) RoHS: Compliant Min Qty: 250 Package Multiple: 250 Lead time: 10 Weeks, 0 Days Container: Tube | 0 |
|
$16.1428 / $16.6902 | Buy Now |
DISTI #
85AC2014
|
Avnet Americas | Transistor RF FET N-CH 133V 3-Pin TO-220 Tube - Bulk (Alt: 85AC2014) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 41 Weeks, 4 Days Container: Bulk | 0 |
|
$19.8800 / $27.5400 | Buy Now |
DISTI #
771-MRF101AN
|
Mouser Electronics | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V RoHS: Compliant | 5949 |
|
$17.9100 / $27.3100 | Buy Now |
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Future Electronics | MRF Series 50 V 250 MHz 100 W CW Wideband RF Power LDMOS Transistor - TO220-3 RoHS: Compliant pbFree: Yes Min Qty: 250 Package Multiple: 50 Lead time: 10 Weeks Container: Tube |
0 Tube |
|
$16.1000 / $16.3900 | Buy Now |
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Rochester Electronics | MRF101 - Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V RoHS: Compliant Status: Active Min Qty: 1 | 3 |
|
$16.1500 / $19.0000 | Buy Now |
|
Ameya Holding Limited | RF TRANSISTOR 100W TO-220 | 238 |
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RFQ | |
DISTI #
MRF101AN
|
IBS Electronics | RF POWER TRANSISTOR 1.8 TO 250 MHZ 100 W CW TYP GAIN IN DB IS 23 @ 50 MHZ TO-220-3L LDMOS Min Qty: 250 Package Multiple: 1 | 0 |
|
$21.4130 / $21.7987 | Buy Now |
DISTI #
MRF101AN
|
Richardson RFPD | RF POWER TRANSISTOR RoHS: Not Compliant Min Qty: 1 | 39 |
|
$19.9300 / $22.1500 | Buy Now |
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MRF101AN
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
MRF101AN
NXP Semiconductors
RF Power Field-Effect Transistor
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00 | |
Factory Lead Time | 41 Weeks, 4 Days | |
Date Of Intro | 2018-11-01 | |
Samacsys Manufacturer | NXP | |
Peak Reflow Temperature (Cel) | 260 | |
Time@Peak Reflow Temperature-Max (s) | 40 |