Datasheets
MRA0610-23 by: Advanced Semiconductor Inc

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.320 INCH, FM-2

Part Details for MRA0610-23 by Advanced Semiconductor Inc

Overview of MRA0610-23 by Advanced Semiconductor Inc

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Applications Consumer Electronics Security and Surveillance Environmental Monitoring Internet of Things (IoT) Space Technology Smart Cities Aerospace and Defense Healthcare Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Robotics and Drones

Part Details for MRA0610-23

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MRA0610-23 Part Data Attributes:

MRA0610-23 Advanced Semiconductor Inc
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MRA0610-23 Advanced Semiconductor Inc RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.320 INCH, FM-2
Part Life Cycle Code Active
Ihs Manufacturer ASI SEMICONDUCTOR INC
Package Description FLANGE MOUNT, R-CDFM-F2
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature DIFFUSED BALLAST RESISTORS
Case Connection BASE
Collector Current-Max (IC) 3.5 A
Collector-Base Capacitance-Max 21 pF
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 10
Highest Frequency Band L BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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