Part Details for MR18R326GAG0-CT9 by Samsung Semiconductor
Overview of MR18R326GAG0-CT9 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Computing and Data Storage
Part Details for MR18R326GAG0-CT9
MR18R326GAG0-CT9 CAD Models
MR18R326GAG0-CT9 Part Data Attributes
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MR18R326GAG0-CT9
Samsung Semiconductor
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Datasheet
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MR18R326GAG0-CT9
Samsung Semiconductor
Rambus DRAM Module, 512MX18, 32ns, CMOS, RIMM-184
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | DMA | |
| Package Description | DIMM, DIMM184,40 | |
| Pin Count | 184 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | BLOCK ORIENTED PROTOCOL | |
| Access Time-Max | 32 ns | |
| Additional Feature | SELF CONTAINED REFRESH | |
| Clock Frequency-Max (fCLK) | 1066 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XDMA-N184 | |
| Memory Density | 9663676416 bit | |
| Memory IC Type | RAMBUS DRAM MODULE | |
| Memory Width | 18 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 184 | |
| Number of Words | 536870912 words | |
| Number of Words Code | 512000000 | |
| Operating Mode | SYNCHRONOUS | |
| Organization | 512MX18 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM184,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Self Refresh | YES | |
| Supply Current-Max | 3.33 mA | |
| Supply Voltage-Max (Vsup) | 2.63 V | |
| Supply Voltage-Min (Vsup) | 2.37 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 1 mm | |
| Terminal Position | DUAL |
Alternate Parts for MR18R326GAG0-CT9
This table gives cross-reference parts and alternative options found for MR18R326GAG0-CT9. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MR18R326GAG0-CT9, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MR18R162WAG0-CK8 | Rambus DRAM Module, 512MX18, CMOS, RIMM-184 | Samsung Semiconductor | MR18R326GAG0-CT9 vs MR18R162WAG0-CK8 |
| MR18R162WDG0-CK8 | Rambus DRAM Module, 512MX18, 45ns, CMOS, RIMM-184 | Samsung Semiconductor | MR18R326GAG0-CT9 vs MR18R162WDG0-CK8 |