Part Details for MQSMBJP6KE10CE3TR by Microsemi Corporation
Overview of MQSMBJP6KE10CE3TR by Microsemi Corporation
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Part Details for MQSMBJP6KE10CE3TR
MQSMBJP6KE10CE3TR CAD Models
MQSMBJP6KE10CE3TR Part Data Attributes
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MQSMBJP6KE10CE3TR
Microsemi Corporation
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MQSMBJP6KE10CE3TR
Microsemi Corporation
Trans Voltage Suppressor Diode, 600W, 8.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | DO-214AA | |
| Package Description | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.50 | |
| Additional Feature | TR, 7 INCH: 750 | |
| Breakdown Voltage-Max | 11 V | |
| Breakdown Voltage-Min | 9 V | |
| Breakdown Voltage-Nom | 10 V | |
| Clamping Voltage-Max | 15 V | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
| JEDEC-95 Code | DO-214AA | |
| JESD-30 Code | R-PDSO-C2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Non-rep Peak Rev Power Dis-Max | 600 W | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity | BIDIRECTIONAL | |
| Power Dissipation-Max | 1.38 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL-19500 | |
| Rep Pk Reverse Voltage-Max | 8.1 V | |
| Surface Mount | YES | |
| Technology | AVALANCHE | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL |