Datasheets
MPQ2369 by:

RF Power Bipolar Transistor, 4-Element, Silicon, NPN, TO-116

Part Details for MPQ2369 by Motorola Semiconductor Products

Overview of MPQ2369 by Motorola Semiconductor Products

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for MPQ2369

Part # Distributor Description Stock Price Buy
Quest Components Bipolar Junction Transistor, Array, Independent, TO-116 211
  • 1 $1.7500
  • 55 $1.0500
  • 144 $0.9450
$0.9450 / $1.7500 Buy Now
Quest Components Bipolar Junction Transistor, Array, Independent, TO-116 48
  • 1 $2.6000
  • 14 $1.6250
  • 47 $1.4300
$1.4300 / $2.6000 Buy Now
Quest Components Bipolar Junction Transistor, Array, Independent, TO-116 10
  • 1 $4.0000
  • 2 $3.0000
  • 9 $2.5000
$2.5000 / $4.0000 Buy Now
Quest Components Bipolar Junction Transistor, Array, Independent, TO-116 20
  • 1 $4.5660
  • 3 $3.8050
  • 8 $3.3484
$3.3484 / $4.5660 Buy Now
Quest Components Bipolar Junction Transistor, Array, Independent, TO-116 72
  • 1 $14.4000
  • 8 $9.6000
  • 27 $8.8800
$8.8800 / $14.4000 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 8
  • 1 $1.7700
  • 100 $1.3300
  • 1,000 $1.1500
$1.1500 / $1.7700 Buy Now

Part Details for MPQ2369

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MPQ2369 Part Data Attributes

MPQ2369 Motorola Semiconductor Products
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MPQ2369 Motorola Semiconductor Products RF Power Bipolar Transistor, 4-Element, Silicon, NPN, TO-116
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Package Description IN-LINE, R-PDIP-T14
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 0.5 A
Collector-Base Capacitance-Max 4 pF
Collector-Emitter Voltage-Max 15 V
Configuration SEPARATE, 4 ELEMENTS
DC Current Gain-Min (hFE) 20
JEDEC-95 Code TO-116
JESD-30 Code R-PDIP-T14
JESD-609 Code e0
Number of Elements 4
Number of Terminals 14
Operating Temperature-Max 125 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 550 MHz
VCEsat-Max 0.25 V

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