Part Details for MG300J1US1 by Toshiba America Electronic Components
Overview of MG300J1US1 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
Part Details for MG300J1US1
MG300J1US1 CAD Models
MG300J1US1 Part Data Attributes
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MG300J1US1
Toshiba America Electronic Components
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Datasheet
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MG300J1US1
Toshiba America Electronic Components
TRANSISTOR 300 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | FLANGE MOUNT, R-PUFM-X4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH SPEED | |
| Collector Current-Max (IC) | 300 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 350 ns | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 4 V |
Alternate Parts for MG300J1US1
This table gives cross-reference parts and alternative options found for MG300J1US1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG300J1US1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MG100J2YS40 | TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300J1US1 vs MG100J2YS40 |
| MG400J1US11 | TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300J1US1 vs MG400J1US11 |
| 1MBI300L-060 | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, M116, 5 PIN | Fuji Electric Co Ltd | MG300J1US1 vs 1MBI300L-060 |
| MG100J2YS1 | TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, 2-94C3A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300J1US1 vs MG100J2YS1 |
| BSM75GB60DLCHOSA1 | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | MG300J1US1 vs BSM75GB60DLCHOSA1 |
| CM600HA-12H | Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel | Powerex Power Semiconductors | MG300J1US1 vs CM600HA-12H |
| 2MBI150N-060 | Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, M233, 7 PIN | Fuji Electric Co Ltd | MG300J1US1 vs 2MBI150N-060 |
| CM600HA-12H | Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, | Mitsubishi Electric | MG300J1US1 vs CM600HA-12H |
| MG400J1US21 | TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300J1US1 vs MG400J1US21 |
| BSM300GB60DLC | Insulated Gate Bipolar Transistor, 375A I(C), 600V V(BR)CES, N-Channel, | Infineon Technologies AG | MG300J1US1 vs BSM300GB60DLC |